H10W 20/0257
Comprising using a sacrificial placeholder
Official title: {comprising using a sacrificial placeholder, e.g. using a sacrificial plug}
H10W20/0257 (Comprising using a sacrificial placeholder) appears on 106 US grants and 140 published applications in this corpus.
Search patents in H10W- Granted patents
- 106
- Published applications
- 140
- Assignees
- 42
- Inventors
- 272
- Latest grant
- 4 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 4 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 1 | 3 |
| 2006 | 1 | 5 |
| 2007 | 1 | 0 |
| 2008 | 4 | 4 |
| 2009 | 1 | 2 |
| 2010 | 1 | 7 |
| 2011 | 6 | 2 |
| 2012 | 6 | 11 |
| 2013 | 6 | 9 |
| 2014 | 12 | 9 |
| 2015 | 7 | 8 |
| 2016 | 9 | 2 |
| 2017 | 3 | 2 |
| 2018 | 4 | 4 |
| 2019 | 6 | 1 |
| 2020 | 1 | 3 |
| 2021 | 1 | 2 |
| 2022 | 1 | 9 |
| 2023 | 6 | 16 |
| 2024 | 8 | 23 |
| 2025 | 8 | 14 |
| 2026 | 9 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device with backside interconnection and method for forming the same4 Aug 2026US 12,701,747 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device including two or more semiconductor structures that are stacked one on another and method for fabricating the same9 Jun 2026US 12,653,073 B2SK hynix Inc.
- Fin-type field effect transistor with independently biasable supplementary gate and method26 May 2026US 12,641,871 B2GLOBALFOUNDRIES U. S. Inc.
- Buried via-to-backside power rail (VBPR) for stacked field-effect transistor (FET)12 May 2026US 12,628,638 B2International Business Machines Corporation
- Vias with vertically non-uniform or discontinuous stack5 May 2026US 12,622,250 B2Intel Corporation
- Semiconductor structure and method for forming the same13 Aug 2026US 2026/0239692 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit device11 Jun 2026US 2026/0165175 A1Samsung Electronics Co., Ltd.
- Semiconductor device and method for manufacturing semiconductor device4 Jun 2026US 2026/0157165 A1
- Integrated circuit structures with deep via structure21 May 2026US 2026/0143748 A1Intel Corporation
- Semiconductor devices including through vias and methods of forming the same6 Nov 2025US 2025/0343110 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Method of bonding wafers having vias including conductive material314US 5,646,067 AHarris Corporation · 1997
- System for interconnecting stacked integrated circuits280US 5,682,062 AHarris Corporation · 1997
- Method of making 3D integrated circuits277US 8,158,515 B2International Business Machines Corporation · 2012
- Formation of deep via airgaps for three dimensional wafer to wafer interconnect252US 7,338,896 B2Interuniversitair Microelektronica Centrum (IMEC) · 2008
- Surface mountable integrated circuit with conductive vias206US 5,608,264 AHarris Corporation · 1997