Semiconductor structure and method for forming the same

A semiconductor structure, comprising:

• a first set of nanostructures extending between a first source/drain feature and a second source/drain feature;
• a second set of nanostructures extending between a third source/drain feature and a fourth source/drain feature;
• a dielectric wall disposed between the first set of nanostructures and the second set of nanostructures, between the first source/drain feature and the third source/drain feature, and between the second source/drain feature and the fourth source/drain feature;
• and
• a fin spacer layer disposed between the first source/drain feature and the dielectric wall and disposed between the third source/drain feature and the dielectric wall.

A semiconductor structure, comprising:

• a set of nanostructures;
• a source/drain feature interfacing with the set of nanostructures in a first direction;
• a fin spacer layer having a first sidewall facing the source/drain feature;
• and
• a dielectric wall having a first sidewall facing the source/drain feature, wherein the fin spacer layer is between the first sidewall of the dielectric wall and the source/drain feature.