Integrated circuit device

A method of manufacturing an integrated circuit device, the method comprising:

• forming a trench by etching an upper portion of a substrate, and a fin-type active region defined by the trench;
• forming a device separation layer filling the trench;
• forming a dummy rail structure filling a first power hole passing through the device separation layer;
• forming a through hole by removing a lower portion of the substrate, to expose the dummy rail structure;
• forming a lower insulating layer covering a lower surface of the substrate;
• forming a wiring recess, by removing a portion of the lower insulating layer, the wiring recess connected to the through hole;
• removing a dummy buried rail of the dummy rail structure in the first power hole, through the wiring recess and the through hole;
• and
• forming a buried rail in the first power hole, a through electrode in the through hole and a power wiring line in the wiring recess.

A method of manufacturing an integrated circuit device, the method comprising:

• forming a trench by etching an upper portion of a substrate, and a fin-type active region defined by the trench;
• forming a device separation layer filling the trench;
• forming a dummy rail structure filling a first power hole passing through the device separation layer, the dummy rail structure including a first insulating barrier covering inner side surfaces of the first power hole and a dummy buried rail covering the first insulating barrier;
• forming a source/drain region on the fin-type active region;
• forming an inter-gate insulating layer on the source/drain region;
• and
• forming a via structure filling a second power hole passing through the inter-gate insulating layer, the via structure connected to the dummy rail structure and including a second insulating barrier covering inner side surfaces of the second power hole and a power via covering the second insulating barrier,
• forming a lower insulating layer covering a lower surface of the substrate;
• forming a wiring recess, by removing a portion of the lower insulating layer and a portion of the substrate, to expose the dummy rail structure;
• removing the dummy buried rail of the dummy rail structure in the first power hole, through the wiring recess;
• and
• forming a buried rail in the first power hole and a power wiring line in the wiring recess.