Semiconductor device including two or more semiconductor structures that are stacked one on another and method for fabricating the same

A method for fabricating a semiconductor device, comprising:

• providing an initial first semiconductor structure that includes first sacrificial pads positioned in an uppermost portion of the initial first semiconductor structure, a first bonding dielectric layer filling a space between the first sacrificial pads, and a first sacrificial through electrode penetrating at least a portion of the initial first semiconductor structure except for the uppermost portion and connected to the first sacrificial pads;
• forming an initial second semiconductor structure that includes second sacrificial pads positioned in a lowermost portion of the initial second semiconductor structure, a second bonding dielectric layer filling a space between the second sacrificial pads, and a second sacrificial through electrode penetrating a portion of the initial second semiconductor structure except for the lowermost portion and connected to the second sacrificial pads, over the initial first semiconductor structure;
• forming first and second openings by removing the first and second sacrificial pads and the first and second sacrificial through electrodes;
• forming a diffusion barrier layer along inner walls of the first and second openings;
• and
• forming a metal-containing layer filling the first and second openings in which the diffusion barrier layer is formed.