H10W 10/0143
Comprising concurrently refilling multiple trenches having different shapes or dimensions
Official title: {comprising concurrently refilling multiple trenches having different shapes or dimensions}
H10W10/0143 (Comprising concurrently refilling multiple trenches having different shapes or dimensions) appears on 1,900 US grants and 1,808 published applications in this corpus.
Search patents in H10W- Granted patents
- 1,900
- Published applications
- 1,808
- Assignees
- 290
- Inventors
- 3,495
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 0 | 0 |
| 1979 | 1 | 0 |
| 1980 | 4 | 0 |
| 1981 | 5 | 0 |
| 1982 | 7 | 0 |
| 1983 | 3 | 0 |
| 1984 | 3 | 0 |
| 1985 | 6 | 0 |
| 1986 | 7 | 0 |
| 1987 | 3 | 0 |
| 1988 | 3 | 0 |
| 1989 | 6 | 0 |
| 1990 | 6 | 0 |
| 1991 | 4 | 0 |
| 1992 | 9 | 0 |
| 1993 | 6 | 0 |
| 1994 | 8 | 0 |
| 1995 | 11 | 0 |
| 1996 | 8 | 0 |
| 1997 | 11 | 0 |
| 1998 | 9 | 0 |
| 1999 | 40 | 0 |
| 2000 | 47 | 0 |
| 2001 | 71 | 29 |
| 2002 | 71 | 78 |
| 2003 | 78 | 75 |
| 2004 | 71 | 87 |
| 2005 | 66 | 89 |
| 2006 | 61 | 64 |
| 2007 | 54 | 72 |
| 2008 | 45 | 65 |
| 2009 | 44 | 71 |
| 2010 | 71 | 61 |
| 2011 | 60 | 77 |
| 2012 | 49 | 71 |
| 2013 | 79 | 63 |
| 2014 | 68 | 82 |
| 2015 | 82 | 77 |
| 2016 | 83 | 78 |
| 2017 | 72 | 63 |
| 2018 | 81 | 75 |
| 2019 | 98 | 110 |
| 2020 | 69 | 84 |
| 2021 | 79 | 64 |
| 2022 | 49 | 73 |
| 2023 | 45 | 67 |
| 2024 | 57 | 59 |
| 2025 | 57 | 44 |
| 2026 | 30 | 30 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Isolation structures and methods of forming the same6 Oct 2026US 12,757,694 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Apparatus with overlapping deep trench and shallow trench and method of fabricating the same with low defect density8 Sep 2026US 12,733,462 B2Texas Instruments Incorporated
- Semiconductor structure and method for forming same25 Aug 2026US 12,721,118 B2Semiconductor Manufacturing International (Beijing) Corporation
- Doping free connection structures and methods4 Aug 2026US 12,701,978 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices28 Jul 2026US 12,696,528 B2Samsung Electronics Co., Ltd.
- Doping free connection structures and methods8 Oct 2026US 2026/0314361 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Through trench isolation for die24 Sep 2026US 2026/0293626 A1Texas Instruments Incorporated
- Semiconductor device and method for fabricating the same17 Sep 2026US 2026/0282468 A1United Microelectronics Corp.
- Semiconductor device and method for fabricating the same17 Sep 2026US 2026/0282469 A1United Microelectronics Corp.
- Deep trench isolation structures and methods of forming the same10 Sep 2026US 2026/0271685 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Structure and method for FinFET integrated with capacitor1,331US 8,860,148 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Device isolation technology on semiconductor substrate592US 7,622,369 B1ASM Japan K .K. · 2009
- Trench fill with HDP-CVD process including coupled high power density plasma deposition572US 6,559,026 B1APPLIED Materials.Inc. · 2003
- Gapfill of variable aspect ratio features with a composite PEALD and PECVD method527US 9,257,274 B2Lam Research Corporation · 2016
- Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD520US 6,596,653 B2APPLIED Materials.Inc. · 2003