Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
AssigneeApplied Materials, Inc.
InventorsZhengquan Tan, Dongqing Li, Walter Zygmunt, Tetsuya Ishikawa
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Abstract
A method of forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The silicon oxide layer is formed by flowing a process gas including a silicon-containing source, an oxygen-containing source, an inert gas and a hydrogen-containing source into the substrate processing chamber and forming a high density plasma (i.e., a plasma having an ion density of at least 1×1011 ions/cm3) from the process gas to deposit said silicon oxide layer over said substrate. In one embodiment, the hydrogen-containing source in the process gas is selected from the group of H2, H2O, NH3, CH4 and C2H6.
Claims29
A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber, said method comprising:
- flowing a process gas into the substrate processing chamber, said process gas comprising a silane gas, an oxygen-containing source, and inert gas and a hydrogen containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus;
- and
- forming a plasma having an ion density of at least 1×1011 ions/cm3 from said process gas to deposit said silicon oxide layer over said substrate.
A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber, said method comprising:
- flowing a process gas comprising SiH4, O2, Ar and a hydrogen-containing source comprising one or more of H2, H2O, NH3, CH4 and C2H6 into the substrate processing chamber;
- and
- forming a plasma having an ion density of at least 1×1011 ions/cm3 from said process gas to deposit said silicon oxide layer over said substrate.
A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber, said method comprising:
- flowing a process gas consisting of SiH4, O2, an inert gas and H2 into the substrate processing chamber, wherein a ratio of a flow rate of said O2 to a combined flow rate of said SiH4 and H2 is between 1.6-2.5:1 inclusive and a ratio of a flow rate of said H2 to a flow rate of said SiH4 is between 0.5-2.0:1 inclusive;
- and
- forming a plasma having an ion density of at least 1×1011 ions/cm3 from said process gas to deposit said silicon oxide layer over said substrate,
- wherein said deposited silicon oxide layer has a dielectric constant of between 4.0 and 4.2 and contains less than or equal to 2 atomic percent hydrogen.
A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber, the substrate having a trench formed between adjacent raised surfaces, said method comprising:
- flowing a process gas into the substrate processing chamber, said process gas comprising a silane gas, an oxygen-containing source, an inert gas and a hydrogen containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus;
- and
- forming a high density plasma from the process gas to deposit the silicon oxide layer over the substrate and into the trench in a process that has simultaneous deposition and sputtering components.
A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber, the substrate having a gap formed between adjacent raised surfaces, said method comprising:
- flowing a process gas into the substrate processing chamber, said process gas comprising a silane gas, an oxygen-containing source and a hydrogen containing source that is either molecular hydrogen or a hydride gas that does not include silicon, boron or phosphorus, wherein a ratio of the flow rate of the hydrogen-containing source to the oxygen containing source is at least 0.5:1;
- and
- forming a high density plasma from the process gas to deposit the silicon oxide layer over the substrate and into the gap in a process that has simultaneous deposition and sputtering components.
Dependencies are inferred from the claim text.