Through trench isolation for die
AssigneeTexas Instruments Incorporated
InventorsScott Robert Summerfelt, Benjamin Stassen Cook, Sebastian Meier
Life of this patent
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Abstract
A device includes a substrate including a first region and a second region spaced apart from the first region by an isolation region, a first dielectric layer coupled to a first surface of the substrate and filling the isolation region between the first region and the second region of the substrate, a dielectric barrier layer coupled to a second surface of the substrate, a dielectric isolation layer coupled to the dielectric barrier layer, a protective overcoat layer coupled to the isolation dielectric layer, and at least one structure configured to reduce a force applied to the protective overcoat layer due to thermal expansion of the first dielectric layer.
Claims20
A device comprising:
- a substrate including a first region and a second region spaced apart from the first region by an isolation region;
- a first dielectric layer coupled to a first surface of the substrate and filling the isolation region between the first region and the second region of the substrate;
- a dielectric barrier layer coupled to a second surface of the substrate;
- a dielectric isolation layer coupled to the dielectric barrier layer;
- a protective overcoat layer coupled to the isolation dielectric layer;
- and
- at least one structure formed in at least one of the isolation region, the dielectric barrier layer, or the dielectric isolation layer, and configured to reduce a force applied to the protective overcoat layer due to thermal expansion of the first dielectric layer.
Dependencies are inferred from the claim text.