H10W 10/0121
In regions recessed from the surface
Official title: {in regions recessed from the surface, e.g. in trenches or grooves}
H10W10/0121 (In regions recessed from the surface) appears on 574 US grants and 382 published applications in this corpus.
Search patents in H10W- Granted patents
- 574
- Published applications
- 382
- Assignees
- 191
- Inventors
- 1,108
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 11 | 0 |
| 1977 | 7 | 0 |
| 1978 | 5 | 0 |
| 1979 | 6 | 0 |
| 1980 | 6 | 0 |
| 1981 | 9 | 0 |
| 1982 | 4 | 0 |
| 1983 | 6 | 0 |
| 1984 | 6 | 0 |
| 1985 | 5 | 0 |
| 1986 | 8 | 0 |
| 1987 | 8 | 0 |
| 1988 | 6 | 0 |
| 1989 | 6 | 0 |
| 1990 | 11 | 0 |
| 1991 | 5 | 0 |
| 1992 | 5 | 0 |
| 1993 | 6 | 0 |
| 1994 | 12 | 0 |
| 1995 | 15 | 0 |
| 1996 | 4 | 0 |
| 1997 | 8 | 0 |
| 1998 | 11 | 0 |
| 1999 | 22 | 0 |
| 2000 | 17 | 0 |
| 2001 | 24 | 8 |
| 2002 | 16 | 13 |
| 2003 | 13 | 15 |
| 2004 | 13 | 11 |
| 2005 | 8 | 4 |
| 2006 | 11 | 16 |
| 2007 | 3 | 12 |
| 2008 | 10 | 11 |
| 2009 | 6 | 12 |
| 2010 | 9 | 10 |
| 2011 | 10 | 6 |
| 2012 | 4 | 5 |
| 2013 | 8 | 9 |
| 2014 | 10 | 19 |
| 2015 | 24 | 39 |
| 2016 | 27 | 28 |
| 2017 | 26 | 16 |
| 2018 | 26 | 23 |
| 2019 | 22 | 18 |
| 2020 | 20 | 22 |
| 2021 | 17 | 17 |
| 2022 | 16 | 21 |
| 2023 | 11 | 10 |
| 2024 | 12 | 15 |
| 2025 | 12 | 12 |
| 2026 | 7 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Display device25 Aug 2026US 12,717,437 B2Samsung Display Co., Ltd.
- Semiconductor device having an isolation region with a recess and method of manufacturing the semiconductor device11 Aug 2026US 12,707,979 B2Infineon Technologies Austria AG
- Semiconductor device including isolation structure with impurity and method for manufacturing the same26 May 2026US 12,642,063 B2Nanya Technology Corporation
- Isolation structure and memory device14 Apr 2026US 12,604,715 B2Winbond Electronics Corp.
- Semiconductor device and method of fabricating a semiconductor device17 Mar 2026US 12,581,685 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method of forming semiconductor device17 Sep 2026US 2026/0282855 A1Nanya Technology Corporation
- Memory devices including high aspect ratio structures16 Jul 2026US 2026/0206561 A1Lodestar Licensing Group LLC
- Semiconductor devices with field relief dielectric structures25 Jun 2026US 2026/0181971 A1
- Insulated gate bipolar junction transistor (igbjt)25 Jun 2026US 2026/0182008 A1
- Semiconductor device18 Jun 2026US 2026/0173439 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Vertical gate all around (VGAA) devices and methods of manufacturing the same987US 9,536,738 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2017
- Process for producing the field oxide of an integrated circuit477US 4,455,193 ACommissariat A L' Energie Atomique · 1984
- Technique for producing small islands of silicon on insulator210US 5,691,230 AMicron Technology, Inc. · 1997
- Method of forming a narrow self-aligned, annular opening in a masking layer196US 5,047,117 AMicron Technology, Inc. · 1991
- Air gaps between copper lines141US 9,396,989 B2APPLIED Materials.Inc. · 2016