Back to results
US 12,642,063 B2Granted
Semiconductor device including isolation structure with impurity and method for manufacturing the same
AssigneeNanya Technology Corporation
InventorsKuo-Chung Hsu, En-Jui Li
Life of this patent
Estimating the term…
Abstract
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a substrate having an active region and a shallow trench isolation (STI) adjacent to the active region of the substrate. The STI includes a charge trapping layer and a liner disposed between the charge trapping layer and the active region of the substrate, wherein the charge trapping layer is doped with an impurity.
Claims8
A semiconductor device, comprising:
- a substrate having an active region;
- and
- a shallow trench isolation (STI) adjacent to the active region of the substrate, wherein the STI comprises:
- a charge trapping layer;
- and
- a liner disposed between the charge trapping layer and the active region of the substrate,
- wherein the charge trapping layer is doped with an impurity;
- wherein the charge trapping layer has a first portion and a second portion, the first portion and the second portion of the charge trapping layer collectively define a trench, and the second portion of the charge trapping layer defines a bottom of the trench, and wherein an impurity concentration of the first portion is greater than an impurity concentration of the second portion of the charge trapping layer.
5 more elements
Dependencies are inferred from the claim text.