H10W 10/0124
The regions having non-rectangular shapes
Official title: {the regions having non-rectangular shapes, e.g. rounded (H10W10/0123 takes precedence)}
H10W10/0124 (The regions having non-rectangular shapes) appears on 126 US grants and 74 published applications in this corpus.
Search patents in H10W- Granted patents
- 126
- Published applications
- 74
- Assignees
- 67
- Inventors
- 300
- Latest grant
- 17 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 1 | 0 |
| 1978 | 2 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 5 | 0 |
| 1982 | 1 | 0 |
| 1983 | 4 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 3 | 0 |
| 1987 | 2 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 4 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 5 | 0 |
| 1995 | 5 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 5 | 0 |
| 2000 | 6 | 0 |
| 2001 | 7 | 5 |
| 2002 | 6 | 5 |
| 2003 | 2 | 2 |
| 2004 | 4 | 2 |
| 2005 | 1 | 0 |
| 2006 | 2 | 3 |
| 2007 | 1 | 5 |
| 2008 | 3 | 5 |
| 2009 | 1 | 0 |
| 2010 | 2 | 3 |
| 2011 | 3 | 1 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 2 |
| 2015 | 3 | 5 |
| 2016 | 5 | 8 |
| 2017 | 6 | 2 |
| 2018 | 3 | 3 |
| 2019 | 1 | 1 |
| 2020 | 1 | 3 |
| 2021 | 3 | 1 |
| 2022 | 3 | 5 |
| 2023 | 1 | 0 |
| 2024 | 3 | 3 |
| 2025 | 2 | 5 |
| 2026 | 1 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device and method of fabricating a semiconductor device17 Mar 2026US 12,581,685 B2Taiwan Semiconductor Manufacturing Company.Ltd
- High voltage device and manufacturing method thereof8 Apr 2025US 12,272,592 B2Richtek Technology Corporation
- Nitride semiconductor device28 Jan 2025US 12,211,839 B2Rohm Co., Ltd.
- High voltage device and manufacturing method thereof13 Aug 2024US 12,062,570 B2Richtek Technology Corporation
- Manufacturing of cavities13 Feb 2024US 11,901,216 B2STMicroelectronics (Crolles 2) SAS
- Method of forming semiconductor device17 Sep 2026US 2026/0282855 A1Nanya Technology Corporation
- Semiconductor devices with field relief dielectric structures25 Jun 2026US 2026/0181971 A1
- Insulated gate bipolar junction transistor (igbjt)25 Jun 2026US 2026/0182008 A1
- Semiconductor device18 Jun 2026US 2026/0173439 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Transistors having varying thicknesses of gate dielectric layers16 Apr 2026US 2026/0107549 A1Globalfoundries Singapore Pte. Ltd.
Most cited
By later US patents
- Process for producing the field oxide of an integrated circuit477US 4,455,193 ACommissariat A L' Energie Atomique · 1984
- Method of forming isolated device regions by selective successive etching of composite masking layers and semiconductor material prior to ion implantation82US 4,569,698 ARaytheon Company · 1986
- Spacer isolation method for minimizing parasitic sidewall capacitance and creating fully recessed field oxide regions81US 4,965,221 AMicron Technology, Inc. · 1990
- Method of forming recessed oxide isolation with reduced steepness of the birds' neck65US 4,630,356 AInternational Business Machines Corporation · 1986
- Micro-trench oxidation by using rough oxide mask for field isolation59US 6,008,106 AMosel Vitelic, Inc. · 1999