Transistors having varying thicknesses of gate dielectric layers
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsYONG WAH SEE, GUOWEI ZHANG
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Abstract
The embodiments herein relate to transistors having varying thicknesses of gate dielectric layers. The transistor includes a gate dielectric layer between a gate electrode and a substrate. The gate dielectric layer includes a first dielectric portion on the substrate, a second dielectric portion at least partially in the substrate, and a third dielectric portion partially in the substrate between the first and second dielectric portions. The second dielectric portion is thicker than the first dielectric portion. The third dielectric portion is thicker than the first dielectric portion and thinner than the second dielectric portion.
Claims20
A transistor, comprising:
- a gate dielectric layer between a gate electrode and a substrate, wherein the gate dielectric layer includes:
- a first dielectric portion on the substrate;
- a second dielectric portion at least partially in the substrate, the second dielectric portion is thicker than the first dielectric portion;
- and
- a third dielectric portion partially in the substrate between the first dielectric portion and the second dielectric portion, wherein the third dielectric portion is thicker than the first dielectric portion and thinner than the second dielectric portion.
A transistor, comprising:
- a gate dielectric layer between a gate electrode and a substrate, wherein the gate dielectric layer includes:
- a first dielectric portion on an upper substrate surface of the substrate;
- a second dielectric portion having an upper portion over the upper substrate surface and a lower portion below the upper substrate surface;
- and
- a third dielectric portion between the first dielectric portion and the second dielectric portion, wherein the third dielectric portion has an upper portion over the upper substrate surface and a lower portion below the upper substrate surface.
A method of forming a transistor, comprising:
- forming an isolation structure in a substrate;
- forming a gate dielectric layer adjacent to the isolation structure, wherein the gate dielectric layer includes:
- a first dielectric portion on the substrate;
- a second dielectric portion at least partially in the substrate, the second dielectric portion is thicker than the first dielectric portion;
- and
- a third dielectric portion partially in the substrate between the first dielectric portion and the second dielectric portion, wherein the third dielectric portion is thicker than the first dielectric portion and thinner than the second dielectric portion;
- and
- forming a gate electrode over the gate dielectric layer.
Dependencies are inferred from the claim text.