Manufacturing of cavities
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorsPascal Gouraud, Delia Ristoiu
Life of this patent
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Abstract
A substrate includes a first solid semiconductor region and a second semiconductor on insulator region. First and second cavities are simultaneously formed in the first and second regions, respectively, of the substrate using etching processes in two steps which form an upper portion and a lower portion of each cavity. The first and second cavities will each have a step at a level of an upper surface of the insulator of the second semiconductor on insulator region. A further oxidation of the first cavity produces a rounded or cut-off area for the upper portion.
Claims16
An electronic device, comprising:
- a substrate including a first solid semiconductor region and a second semiconductor on insulator region;
- a first cavity in the first solid semiconductor region of the substrate;
- a second cavity in the second semiconductor on insulator region of the substrate;
- and
- wherein sidewalls of the first cavity include a change in slope at a level corresponding to a level of an insulator layer of the semiconductor on insulator region.
An electronic device, comprising:
- a substrate including a solid semiconductor region and a semiconductor on insulator region;
- a cavity in the solid semiconductor region of the substrate;
- an insulating layer lining sidewalls of the cavity;
- wherein the cavity includes an upper portion and a lower portion;
- wherein the sidewalls of the cavity include a change in slope at a level of a change from the lower portion to the upper portion;
- wherein the level of change from the lower portion to the upper portion corresponds to a level of an insulator layer of the semiconductor on insulator region;
- and
- wherein sidewalls of the insulating layer adjacent the upper portion of the cavity define a rounded shape.
Dependencies are inferred from the claim text.