H10P 90/1906
Preparing soi wafers
Official title: {Preparing SOI wafers}
H10P90/1906 (Preparing soi wafers) appears on 7,603 US grants and 7,693 published applications in this corpus.
Search patents in H10P- Granted patents
- 7,603
- Published applications
- 7,693
- Assignees
- 1,101
- Inventors
- 8,531
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 6 | 0 |
| 1978 | 6 | 0 |
| 1979 | 4 | 0 |
| 1980 | 6 | 0 |
| 1981 | 12 | 0 |
| 1982 | 4 | 0 |
| 1983 | 6 | 0 |
| 1984 | 9 | 0 |
| 1985 | 13 | 0 |
| 1986 | 14 | 0 |
| 1987 | 18 | 0 |
| 1988 | 16 | 0 |
| 1989 | 31 | 0 |
| 1990 | 27 | 0 |
| 1991 | 42 | 0 |
| 1992 | 45 | 0 |
| 1993 | 56 | 0 |
| 1994 | 81 | 0 |
| 1995 | 75 | 0 |
| 1996 | 62 | 0 |
| 1997 | 65 | 0 |
| 1998 | 75 | 0 |
| 1999 | 110 | 0 |
| 2000 | 126 | 0 |
| 2001 | 189 | 80 |
| 2002 | 187 | 230 |
| 2003 | 243 | 224 |
| 2004 | 190 | 332 |
| 2005 | 200 | 335 |
| 2006 | 250 | 387 |
| 2007 | 209 | 330 |
| 2008 | 237 | 386 |
| 2009 | 244 | 333 |
| 2010 | 328 | 339 |
| 2011 | 315 | 341 |
| 2012 | 280 | 296 |
| 2013 | 286 | 290 |
| 2014 | 312 | 314 |
| 2015 | 340 | 358 |
| 2016 | 311 | 333 |
| 2017 | 345 | 330 |
| 2018 | 292 | 312 |
| 2019 | 307 | 346 |
| 2020 | 310 | 309 |
| 2021 | 292 | 338 |
| 2022 | 249 | 286 |
| 2023 | 245 | 284 |
| 2024 | 219 | 245 |
| 2025 | 191 | 189 |
| 2026 | 114 | 146 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10P 90/1914Using bonding4,332
- H10P 90/1908Using silicon implanted buried insulating layers588
- H10P 90/1922Using silicon etch back techniques505
- H10P 90/1924With separation/delamination along a porous layer267
- H10P 90/1912Using selective deposition248
- H10P 90/191Using full isolation by porous oxide silicon [fipos]65
Recent patents
- Semiconductor structure and fabrication method thereof6 Oct 2026US 12,757,691 B2United Microelectronics Corp.
- Low cross-talk noise resistive memory devices on a SOI substrate and methods of making the same29 Sep 2026US 12,751,018 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Laser recovery of a core layer of a temporary carrier structure29 Sep 2026US 12,751,028 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor fabrication process22 Sep 2026US 12,745,455 B2X-FAB France SAS
- Composite substrate, manufacturing method thereof and semiconductor device22 Sep 2026US 12,745,456 B2Enkris Semiconductor (Wuxi), Ltd.
- Soi device structure for robust isolation8 Oct 2026US 2026/0313979 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for Separating a Layer of Solid Material from a Workpiece8 Oct 2026US 2026/0314345 A1Siltectra GmbH
- Process for double layer transfer8 Oct 2026US 2026/0314346 A1
- Silicon-on-insulator substrate including trap-rich layer and methods for making thereof1 Oct 2026US 2026/0305272 A1
- Semiconductor devices and data storage systems including the same24 Sep 2026US 2026/0293163 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994
- Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method924US 6,372,608 B1Seiko Epson Corporation · 2002
- Separation of thin films from transparent substrates by selective optical processing783US 6,071,795 AThe Regents of the University of California · 2000
- Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same714US 6,645,830 B2Seiko Epson Corporation · 2003
- Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same674US 6,818,530 B2Seiko Epson Corporation · 2004