H10P 90/1908
Using silicon implanted buried insulating layers
Official title: {using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]}
H10P90/1908 (Using silicon implanted buried insulating layers) appears on 588 US grants and 533 published applications in this corpus.
Search patents in H10P- Granted patents
- 588
- Published applications
- 533
- Assignees
- 194
- Inventors
- 1,052
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 5 | 0 |
| 1988 | 3 | 0 |
| 1989 | 5 | 0 |
| 1990 | 5 | 0 |
| 1991 | 4 | 0 |
| 1992 | 6 | 0 |
| 1993 | 5 | 0 |
| 1994 | 12 | 0 |
| 1995 | 11 | 0 |
| 1996 | 11 | 0 |
| 1997 | 7 | 0 |
| 1998 | 7 | 0 |
| 1999 | 14 | 0 |
| 2000 | 17 | 0 |
| 2001 | 24 | 9 |
| 2002 | 13 | 24 |
| 2003 | 28 | 22 |
| 2004 | 24 | 33 |
| 2005 | 19 | 32 |
| 2006 | 23 | 29 |
| 2007 | 14 | 38 |
| 2008 | 14 | 37 |
| 2009 | 30 | 26 |
| 2010 | 27 | 17 |
| 2011 | 26 | 15 |
| 2012 | 14 | 11 |
| 2013 | 14 | 12 |
| 2014 | 13 | 12 |
| 2015 | 20 | 18 |
| 2016 | 22 | 18 |
| 2017 | 13 | 14 |
| 2018 | 12 | 16 |
| 2019 | 15 | 14 |
| 2020 | 18 | 22 |
| 2021 | 17 | 23 |
| 2022 | 15 | 18 |
| 2023 | 25 | 23 |
| 2024 | 4 | 13 |
| 2025 | 10 | 22 |
| 2026 | 14 | 15 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Method of manufacturing SOI wafer14 Jul 2026US 12,685,096 B2Korea Advanced Institute of Science and Technology
- Method of forming semiconductor device23 Jun 2026US 12,666,932 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for manufacturing SOI wafer14 Apr 2026US 12,604,688 B2Shin-Etsu Handotai Co., Ltd.
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- Semiconductor device and method for forming the same13 Aug 2026US 2026/0239738 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor devices using fully-depleted silicon-on-insulator (fdsoi) and methods for forming the same2 Jul 2026US 2026/0190481 A1Yangtze Memory Technologies Co., Ltd.
- Wafer-level die singulation using buried sacrificial structure18 Jun 2026US 2026/0173500 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and manufacturing method thereof7 May 2026US 2026/0129970 A1Taiwan Semiconductor Manufacturing Company.Ltd
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By later US patents
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- Formation of insulating aluminum oxide in semiconductor substrates498US 6,635,559 B2Spire Corporation · 2003
- Semiconductor member and process for preparing semiconductor member427US 5,371,037 ACanon Kabushiki Kaisha · 1994
- Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device368US 6,653,209 B1Canon Kabushiki Kaisha · 2003