Method of manufacturing SOI wafer
AssigneeKorea Advanced Institute of Science and Technology
InventorJungchul Lee
Life of this patent
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Abstract
A SOI wafer is formed by forming a hole array on a surface of a wafer including a semiconductor material, forming a membrane-cavity structure by annealing process on the wafer, forming a buried oxide layer on an inside of the cavity and an outer oxide layer on an outside of the membrane, and forming a device layer by removing the outer oxide layer.
Claims17
A method of manufacturing a SOI (silicon-on-Insulator) wafer, the method comprising:
- forming a hole array on a surface of a wafer including a semiconductor material;
- forming a membrane-cavity structure by performing an annealing process on the wafer, the membrane-cavity structure including a cavity corresponding to the hole array and a membrane disposed on the cavity;
- forming a buried oxide layer on an inside of the cavity and a first outer oxide layer on an outside of the membrane;
- and
- forming a device layer by removing the first outer oxide layer,
- wherein the hole array includes a plurality of holes,
- wherein the cavity is formed by connecting the holes to each other while the annealing process is performed.
A method of manufacturing a SOI (silicon-on-Insulator) wafer, the method comprising:
- forming a hole array on a surface of a wafer including a semiconductor material;
- forming a membrane-cavity structure by performing an annealing process on the wafer, the membrane-cavity structure including a cavity corresponding to the hole array and a membrane disposed on the cavity;
- forming a buried oxide layer on an inside of the cavity and a first outer oxide layer on an outside of the membrane;
- and
- forming a device layer by removing the first outer oxide layer,
- wherein the buried oxide layer includes:
- a lower oxide layer formed on a lower portion of the cavity;
- and
- an upper oxide layer formed on an upper portion of the cavity.
A method of manufacturing a SOI (silicon-on-Insulator) wafer, the method comprising:
- forming a hole array on a surface of a wafer including a semiconductor material;
- forming a membrane-cavity structure by performing an annealing process on the wafer, the membrane-cavity structure including a cavity corresponding to the hole array and a membrane disposed on the cavity;
- forming a buried oxide layer on an inside of the cavity and a first outer oxide layer on an outside of the membrane;
- forming a device layer by removing the first outer oxide layer;
- and
- forming a second outer oxide layer on an outside of the membrane,
- after forming the first outer oxide layer.
A method of manufacturing a SOI (silicon-on-Insulator) wafer, the method comprising:
- forming a hole array on a surface of a wafer including a semiconductor material;
- forming a membrane-cavity structure by performing an annealing process on the wafer, the membrane-cavity structure including a cavity corresponding to the hole array, a membrane disposed on the cavity and a base layer disposed under the cavity;
- forming a buried oxide layer on an inside of the cavity and a first outer oxide layer on an outside of the membrane;
- forming a third outer oxide layer on an outside of the base layer;
- and
- forming a device layer by removing the first outer oxide layer,
- wherein the third outer oxide layer is formed together with the buried oxide layer and the first outer oxide layer.
Dependencies are inferred from the claim text.