Method of forming semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShih-Wei Peng, Wei-Cheng Lin, Jiann-Tyng Tzeng
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Abstract
A method of forming a semiconductor device includes forming a wafer having an ion-implanted silicon layer, wherein the ion-implanted silicon layer is disposed between a first insulator layer and a second insulator layer inside the wafer; forming an active region over the ion-implanted silicon layer; forming an active device in the active region; and forming a conductive via to couple the ion-implanted silicon layer and the active device.
Claims20
A method of forming a semiconductor device, comprising:
- forming a wafer having an ion-implanted silicon layer, wherein the ion-implanted silicon layer is disposed between a first insulator layer and a second insulator layer inside the wafer;
- forming an active region over the ion-implanted silicon layer;
- forming an active device in the active region;
- and
- forming a conductive via to couple the ion-implanted silicon layer and the active device.
A method of forming a semiconductor device, comprising:
- forming a wafer having a buried conductive layer, wherein the buried conductive layer is disposed between a first insulator layer and a second insulator layer inside the wafer;
- defining an active region over the buried conductive layer;
- forming a trench in the active region, wherein the first insulator layer is exposed through a bottom of the trench;
- forming a conductive via coupled to the buried conductive layer;
- and
- forming an active device in the active region.
A method of forming a semiconductor device, comprising:
- receiving a substrate comprising a first insulator layer, a second insulator layer, a conductive layer between the first insulator layer and the second insulator layer, and a first semiconductor layer disposed over the first insulator layer;
- removing portions of the first insulator layer, portions of the second insulator layer and portions of the conductive layer to form an active region;
- forming an isolation fin adjacent to the active region;
- and
- forming a conductive via penetrating the first insulator layer and coupled to the conductive layer.
Dependencies are inferred from the claim text.