H10P 90/1904
Preparing vertically inhomogeneous wafers
Official title: {Preparing vertically inhomogeneous wafers}
H10P90/1904 (Preparing vertically inhomogeneous wafers) appears on 7,673 US grants and 7,802 published applications in this corpus.
Search patents in H10P- Granted patents
- 7,673
- Published applications
- 7,802
- Assignees
- 1,128
- Inventors
- 8,655
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 9 | 0 |
| 1977 | 6 | 0 |
| 1978 | 6 | 0 |
| 1979 | 4 | 0 |
| 1980 | 6 | 0 |
| 1981 | 12 | 0 |
| 1982 | 4 | 0 |
| 1983 | 6 | 0 |
| 1984 | 9 | 0 |
| 1985 | 13 | 0 |
| 1986 | 14 | 0 |
| 1987 | 18 | 0 |
| 1988 | 16 | 0 |
| 1989 | 31 | 0 |
| 1990 | 27 | 0 |
| 1991 | 42 | 0 |
| 1992 | 45 | 0 |
| 1993 | 56 | 0 |
| 1994 | 81 | 0 |
| 1995 | 75 | 0 |
| 1996 | 62 | 0 |
| 1997 | 65 | 0 |
| 1998 | 75 | 0 |
| 1999 | 110 | 0 |
| 2000 | 129 | 0 |
| 2001 | 190 | 81 |
| 2002 | 188 | 231 |
| 2003 | 244 | 225 |
| 2004 | 190 | 333 |
| 2005 | 200 | 341 |
| 2006 | 253 | 390 |
| 2007 | 214 | 334 |
| 2008 | 238 | 386 |
| 2009 | 247 | 337 |
| 2010 | 329 | 342 |
| 2011 | 319 | 344 |
| 2012 | 280 | 307 |
| 2013 | 291 | 303 |
| 2014 | 320 | 320 |
| 2015 | 350 | 362 |
| 2016 | 314 | 340 |
| 2017 | 347 | 333 |
| 2018 | 294 | 315 |
| 2019 | 312 | 349 |
| 2020 | 313 | 312 |
| 2021 | 293 | 338 |
| 2022 | 251 | 289 |
| 2023 | 245 | 288 |
| 2024 | 221 | 254 |
| 2025 | 193 | 195 |
| 2026 | 116 | 153 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor structure and fabrication method thereof6 Oct 2026US 12,757,691 B2United Microelectronics Corp.
- Low cross-talk noise resistive memory devices on a SOI substrate and methods of making the same29 Sep 2026US 12,751,018 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Laser recovery of a core layer of a temporary carrier structure29 Sep 2026US 12,751,028 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor fabrication process22 Sep 2026US 12,745,455 B2X-FAB France SAS
- Composite substrate, manufacturing method thereof and semiconductor device22 Sep 2026US 12,745,456 B2Enkris Semiconductor (Wuxi), Ltd.
- Soi device structure for robust isolation8 Oct 2026US 2026/0313979 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method for Separating a Layer of Solid Material from a Workpiece8 Oct 2026US 2026/0314345 A1Siltectra GmbH
- Process for double layer transfer8 Oct 2026US 2026/0314346 A1
- Group iii nitride semiconductor epitaxial wafer and electronic device1 Oct 2026US 2026/0304875 A1Panasonic Holdings Corporation
- Silicon-on-insulator substrate including trap-rich layer and methods for making thereof1 Oct 2026US 2026/0305272 A1
Most cited
By later US patents
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994
- Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method924US 6,372,608 B1Seiko Epson Corporation · 2002
- Separation of thin films from transparent substrates by selective optical processing783US 6,071,795 AThe Regents of the University of California · 2000
- Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same714US 6,645,830 B2Seiko Epson Corporation · 2003
- Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same674US 6,818,530 B2Seiko Epson Corporation · 2004