Laser recovery of a core layer of a temporary carrier structure

A method, comprising:

• providing a core layer of a temporary carrier structure,
• wherein the core layer consists of aluminum nitride having a first bandgap of less than approximately 6.28 electron volts (eV);
• forming a debonding layer over the core layer,
• wherein the debonding layer comprises a first material having a second bandgap less than the first bandgap;
• forming a dielectric layer over the debonding layer;
• joining the dielectric layer and a layer stack that includes a seed layer;
• and
• providing energy from a laser source to the debonding layer to separate the core layer from the seed layer.

A method, comprising:

• providing a core layer, of a temporary carrier structure, aluminum nitride having a first bandgap of less than approximately 6.28 electron volts (eV),
• wherein the aluminum nitride comprises a first coefficient of thermal expansion for a temperature range related to a growth of an epitaxial material;
• forming a debonding layer over the core layer;
• forming a dielectric layer over the debonding layer;
• joining the dielectric layer with a seed layer;
• forming a substrate layer, from a second material that is different from the aluminum nitride, on the seed layer,
• wherein the second material comprises a second coefficient of thermal expansion for the temperature range related to the growth of the epitaxial material, and
• wherein a ratio of the second coefficient of thermal expansion to the first coefficient of thermal expansion is approximately 1:1;
• and
• providing energy from a laser source to the debonding layer to separate the core layer from the dielectric layer, the seed layer, and the substrate layer.