Process for double layer transfer

A method for double transfer of a layer, comprising

• providing a heterostructure comprising a growth substrate, an interlayer of two-dimensional material on the growth substrate and at least one epitaxial layer of semiconductor material formed on the interlayer;
• providing a rigid substrate comprising a weakened plane formed by ion implantation through a first face of the rigid substrate, the weakened plane separating a thin layer-(from a bulk part of the rigid substrate;
• producing a first assembly by bonding the rigid substrate with the heterostructure, the first face of the rigid substrate and the at least one epitaxial layer of the heterostructure being at a bonding interface of the rigid substrate and the heterostructure;
• separating the first assembly at the interlayer of two-dimensional material to obtain a second assembly resulting from the transfer of the at least one epitaxial layer from the heterostructure to the rigid substrate;
• producing a third assembly by bonding the second assembly with a target substrate, the at least one epitaxial layer being at the bonding interface between the second assembly and the target substrate;
• and
• separating the third assembly along the weakened plane of the rigid substrate to obtain a fourth assembly resulting from the transfer of the at least one epitaxial layer and of the thin layer of the third assembly to the target substrate.