H10P 90/00
Preparation of wafers not covered by a single main group of this
Official title: Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
H10P90/00 (Preparation of wafers not covered by a single main group of this) appears on 9,658 US grants and 10,291 published applications in this corpus.
Search patents in H10P- Granted patents
- 9,658
- Published applications
- 10,291
- Assignees
- 1,576
- Inventors
- 12,683
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 12 | 0 |
| 1977 | 8 | 0 |
| 1978 | 12 | 0 |
| 1979 | 8 | 0 |
| 1980 | 7 | 0 |
| 1981 | 15 | 0 |
| 1982 | 8 | 0 |
| 1983 | 8 | 0 |
| 1984 | 12 | 0 |
| 1985 | 16 | 0 |
| 1986 | 19 | 0 |
| 1987 | 21 | 0 |
| 1988 | 19 | 0 |
| 1989 | 39 | 0 |
| 1990 | 33 | 0 |
| 1991 | 53 | 0 |
| 1992 | 57 | 0 |
| 1993 | 60 | 0 |
| 1994 | 87 | 0 |
| 1995 | 88 | 0 |
| 1996 | 68 | 0 |
| 1997 | 74 | 0 |
| 1998 | 94 | 0 |
| 1999 | 153 | 0 |
| 2000 | 156 | 0 |
| 2001 | 228 | 104 |
| 2002 | 223 | 267 |
| 2003 | 264 | 254 |
| 2004 | 205 | 367 |
| 2005 | 222 | 377 |
| 2006 | 279 | 434 |
| 2007 | 237 | 389 |
| 2008 | 261 | 443 |
| 2009 | 271 | 409 |
| 2010 | 362 | 404 |
| 2011 | 353 | 410 |
| 2012 | 318 | 361 |
| 2013 | 348 | 397 |
| 2014 | 391 | 430 |
| 2015 | 431 | 480 |
| 2016 | 410 | 441 |
| 2017 | 437 | 466 |
| 2018 | 424 | 465 |
| 2019 | 441 | 503 |
| 2020 | 439 | 479 |
| 2021 | 414 | 498 |
| 2022 | 360 | 483 |
| 2023 | 346 | 460 |
| 2024 | 366 | 409 |
| 2025 | 319 | 317 |
| 2026 | 182 | 244 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10P 90/19Preparing inhomogeneous wafers7,707
- H10P 90/12Preparing bulk and homogeneous wafers1,883
- H10P 90/22Preparation of wafers not covered by a single main group of this40
- H10P 90/24Preparation of wafers not covered by a single main group of this36
- H10P 90/21Preparation of wafers not covered by a single main group of this5
Recent patents
- Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer6 Oct 2026US 12,753,529 B2JX Advanced Metals Corporation
- Semiconductor structure and fabrication method thereof6 Oct 2026US 12,757,691 B2United Microelectronics Corp.
- Low cross-talk noise resistive memory devices on a SOI substrate and methods of making the same29 Sep 2026US 12,751,018 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Laser recovery of a core layer of a temporary carrier structure29 Sep 2026US 12,751,028 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for producing a detachment region in a solid-state body22 Sep 2026US 12,741,341 B2Siltectra GmbH
- Soi device structure for robust isolation8 Oct 2026US 2026/0313979 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Sic wafer and sic epitaxial wafer8 Oct 2026US 2026/0313999 A1Resonac Corporation
- Substrate production method and chip production method8 Oct 2026US 2026/0314344 A1Disco Corporation
- Method for Separating a Layer of Solid Material from a Workpiece8 Oct 2026US 2026/0314345 A1Siltectra GmbH
- Process for double layer transfer8 Oct 2026US 2026/0314346 A1
Most cited
By later US patents
- Process for the production of thin semiconductor material films1,233US 5,374,564 ACommissariat A L' Energie Atomique · 1994
- Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method924US 6,372,608 B1Seiko Epson Corporation · 2002
- Separation of thin films from transparent substrates by selective optical processing783US 6,071,795 AThe Regents of the University of California · 2000
- Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same714US 6,645,830 B2Seiko Epson Corporation · 2003
- Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same674US 6,818,530 B2Seiko Epson Corporation · 2004