H10P 90/22
Preparation of wafers not covered by a single main group of this
Official title: {by transferring layers from a donor substrate to a final substrate utilising a temporary handle substrate as an intermediary}
H10P90/22 (Preparation of wafers not covered by a single main group of this) appears on 40 US grants and 50 published applications in this corpus.
Search patents in H10P- Granted patents
- 40
- Published applications
- 50
- Assignees
- 27
- Inventors
- 64
- Latest grant
- 10 Dec 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 0 | 2 |
| 2004 | 2 | 4 |
| 2005 | 3 | 2 |
| 2006 | 1 | 5 |
| 2007 | 2 | 6 |
| 2008 | 3 | 3 |
| 2009 | 5 | 2 |
| 2010 | 4 | 0 |
| 2011 | 1 | 0 |
| 2012 | 2 | 1 |
| 2013 | 0 | 0 |
| 2014 | 0 | 3 |
| 2015 | 2 | 1 |
| 2016 | 0 | 3 |
| 2017 | 2 | 1 |
| 2018 | 2 | 3 |
| 2019 | 2 | 3 |
| 2020 | 1 | 2 |
| 2021 | 2 | 3 |
| 2022 | 1 | 1 |
| 2023 | 2 | 0 |
| 2024 | 3 | 3 |
| 2025 | 0 | 0 |
| 2026 | 0 | 2 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Method of mechanical separation for a double layer transfer10 Dec 2024US 12,165,900 B2Soitec
- Transferring large-area group III-nitride semiconductor material and devices to arbitrary substrates25 Jun 2024US 12,020,985 B2The Government of the United States of America, as represented by the Secretary of the Navy
- Method of transferring device layer to transfer substrate and highly thermal conductive substrate16 Jan 2024US 11,876,014 B2Shin-Etsu Chemical Co., Ltd.
- Methods of manufacturing thin film transistor, biometric device, and display apparatus28 Nov 2023US 11,830,763 B2Beijing Boe Display Technology Co., Ltd.
- Method of mechanical separation for a double layer transfer29 Aug 2023US 11,742,233 B2Soitec
- Methods for the provision of a coated graphene layer structure on a silicon-containing wafer20 Aug 2026US 2026/0247936 A1Paragraf Limited
- Method for manufacturing two substrates called donor pseudo-substrates each comprising at least two tiles on a carrier substrate6 Aug 2026US 2026/0231741 A1
- Method of manufacturing compound semiconductor bonded substrate and compound semiconductor bonded substrate7 Nov 2024US 2024/0371641 A1Shin-Etsu Handotai Co., Ltd.
- Methods of forming carbonaceous membrane with free-standing form6 Jun 2024US 2024/0186144 A1
- Method of mechanical separation for a double layer transfer18 Jan 2024US 2024/0021461 A1Soitec
Most cited
By later US patents
- Monolithically integrated light emitting devices262US 7,535,089 B2Massachusetts Institute of Technology · 2009
- Methods for fabricating final substrates107US 6,867,067 B2S. O. I. Tec Silicon on Insulator Technologies · 2005
- Methods for fabricating a substrate92US 6,794,276 B2S. O. I. Tec Silicon on Insulator Technologies · 2004
- Monolithically integrated silicon and III-V electronics32US 8,120,060 B2Massachusetts Institute of Technology · 2012
- Support-integrated donor wafers for repeated thin donor layer separation30US 6,815,309 B2S. O. I. Tec Silicon on Insulator Technologies · 2004