Methods of manufacturing thin film transistor, biometric device, and display apparatus

A method of manufacturing at least one thin film transistor, comprising:

• providing a monocrystalline silicon wafer including a first surface and a second surface that are opposite to each other;
• forming a bubble layer between the first surface and the second surface of the monocrystalline silicon wafer, the bubble layer dividing the monocrystalline silicon wafer into two portions arranged side by side in a direction perpendicular to the second surface, and a portion of the monocrystalline silicon wafer that is located between the bubble layer and the second surface being a monocrystalline silicon film having a target thickness;
• providing a substrate;
• transferring the monocrystalline silicon film onto the substrate by breaking the monocrystalline silicon wafer at the bubble layer;
• and
• patterning the monocrystalline silicon film transferred to the substrate to form at least one active layer of the at least one thin film transistor;
• wherein before providing the substrate, the method further comprises manufacturing the substrate, including:
• forming at least one gate of the at least one thin film transistor on a side of a base substrate;
• and
• forming a gate insulating layer on a surface, away from the base substrate, of the at least one gate to obtain the substrate;
• after patterning the monocrystalline silicon film transferred to the substrate to form the at least one active layer of the at least one thin film transistor, the method further comprises:
• forming at least one source and at least one drain of the at least one thin film transistor on a side, away from the base substrate, of the at least one active layer.