Methods for fabricating a substrate
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsFabrice Letertre, Bruno Ghyselen
Life of this patent
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Abstract
A method is provided for fabricating a substrate for optics, electronics, or optoelectronics. This method includes the steps of transferring a seed layer to a support layer, depositing a working layer onto the seed layer to form a composite substrate and detaching the working layer and the seed layer from the support to form a substrate. Advantageously, the support substrate comprises a material having a thermal expansion value of about 0.7 to 3 times the coefficient value of the working layer.
Claims25
A method for fabricating a substrate for optics, electronics, or opto-electronics, which method comprises:
- transferring a seed layer on to a support substrate;
- depositing a working layer on the seed layer to form a composite substrate;
- and
- detaching the seed layer and the working layer from the composite substrate to form a substrate;
- wherein the support substrate comprises a material having a thermal expansion value of about 0.7 to 3 times the coefficient value of the working layer.
A method for fabricating a substrate for optics, electronics, or opto-electronics, which method comprises:
- transferring a seed layer onto a support substrate;
- depositing a working layer on the seed layer to form a composite substrate;
- and
- detaching the seed layer and the working layer from the composite substrate;
- wherein the seed layer includes a crystal lattice parameter sufficient for epitaxial growth of the working layer having a dislocation parameter of less than about 107/cm2.
Dependencies are inferred from the claim text.