Methods for the provision of a coated graphene layer structure on a silicon-containing wafer

Abstract

There is provided a method for the provision of a coated graphene layer structure (410) on a silicon-containing wafer (435), the method comprising: (1) providing a wafer stack (420) comprising, in order, a transparent substrate (400), a nitride layer (405), a graphene layer structure (410) and a dielectric passivation layer (415), wherein the dielectric passivation layer (415) has an exposed upper surface; (2) forming or adhering (300) a further layer (435) onto the exposed upper surface of the dielectric passivation layer (415); and (3) removing the substrate (400) by laser lift-off 305 to expose a surface of the nitride layer (405) distal from the graphene layer structure (410); wherein the nitride layer (405) of the wafer stack (420) comprises a first surface directly adjacent the substrate (400) and a second surface directly adjacent the graphene layer structure (410), wherein the first and second surfaces are each independently formed of aluminium nitride or boron nitride; and wherein: the method further comprises wafer bonding (130, FIG. 2) the exposed surface of the nitride layer to a surface (235b′, FIG. 2) of a silicon-containing wafer (235, FIG. 2) after the step (125, FIG. 2) of removing the substrate (225, FIG. 2); or the step of forming or adhering comprises wafer bonding (300), and the further layer is a silicon-containing wafer (435). The laminate (440) is suitable for the manufacture of an electronic device (460).

Dependencies are inferred from the claim text.