Method of manufacturing compound semiconductor bonded substrate and compound semiconductor bonded substrate

Abstract

The present invention relates to a method of manufacturing a compound semiconductor bonded substrate comprising the steps of: (1) epitaxially growing a compound semiconductor functional layer on a starting substrate; (2) temporarily bonding a support substrate to the epitaxially grown surface to form a first compound semiconductor bonded substrate; (3) removing the starting substrate from the first compound semiconductor bonded substrate to form a second compound semiconductor bonded substrate; (4) finally bonding a surface of the second compound semiconductor bonded substrate from which the starting substrate has been removed to a permanent substrate to form a third compound semiconductor bonded substrate; (5) removing the support substrate from the third compound semiconductor bonded substrate to form a fourth compound semiconductor bonded substrate, wherein the temporary bonding is performed via a thermosetting resin, the thermosetting resin being maintained in a softened state without being cured, and the final bonding is performed via a silicon oxide film or a silicon nitride film. Thus, provided is a method of manufacturing a compound semiconductor bonded substrate having an improved degree of freedom in designing a device or a device system.

Dependencies are inferred from the claim text.