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US 11,876,014 B2Granted
Method of transferring device layer to transfer substrate and highly thermal conductive substrate
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsShigeru Konishi, Yoshihiro Kubota
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Abstract
A highly thermal conductive substrate formed by bonding a device layer formed on a silicon on insulator (SOI) wafer and a buried oxide film to an insulator substrate having a thermal conductivity of 40 W/m·K or more via a low-stress adhesive, wherein a thickness of the buried oxide film is 50 to 500 nm and a thickness of the adhesive is 0.1 to 10 μm.
Claims2
A thermal conductive substrate,
- which is a substrate formed by bonding a device layer formed on a silicon on insulator (SOI) wafer and a buried oxide film to an insulator substrate having a thermal conductivity of 40 W/m·K or more via an adhesive having a Young's modulus after curing of 10 MPa to 2 GPa,
- wherein a thickness of the buried oxide film is 50 to 500 nm and a thickness of the adhesive is 0.1 μm to 10 μm;
- and
- wherein the adhesive is a thermosetting epoxy-modified silicone.
1 more element
Dependencies are inferred from the claim text.