Methods for fabricating final substrates
AssigneeS.O.I. Tec Silicon on Insulator Technologies
InventorsBruno Ghyselen, Fabrice Letertre
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AssigneeS.O.I. Tec Silicon on Insulator Technologies
InventorsBruno Ghyselen, Fabrice Letertre
Estimating the term…
Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. In an embodiment, the method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer, and forming a first bonding layer on the source substrate surface. A second bonding layer may be formed on a surface of an intermediate support, and the exposed surfaces of the first and second bonding layers joined to form a composite substrate. Next, the source substrate is detached from the composite substrate along the zone of weakness to expose a surface of the transfer layer, and a support material is deposited onto the exposed surface of the transfer layer. The transfer layer and support material are then separated from the composite substrate by elimination of at least the first bonding layer to form the final substrate. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.
A method of fabricating a final substrate for use in optics, eletronics, or optoelectronics which method comprises:
A method of fabricating a final substrate for use in optics, electronics, or optoelectronics comprising:
Dependencies are inferred from the claim text.