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US 2026/0313999 A1Published application
Sic wafer and sic epitaxial wafer
AssigneeResonac Corporation
InventorsYumiko NAKAMURA, Yuzo SASAKI
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Abstract
A SiC wafer according to the present embodiment includes an end region within 5 mm from an outer circumferential end, wherein, in the end region, the concentration of each of Ti, V and Zr is 5.0×1011 atoms/cm2 or less, the concentration of each of Cr, Ni, Cu, W, Mo and Mn is 1.0×1011 atoms/cm2 or less, and the concentration of each of B, Al and Fe is 5.0×1012 atoms/cm2 or less.
Claims8
A SiC epitaxial wafer comprising:
- a SiC epitaxial layer,
- wherein the SiC epitaxial layer has a surface roughness (Rq) of less than 0.757 nm in a second region extending from an outer edge to a distance of 3 mm.
Dependencies are inferred from the claim text.