H10P 90/24
Preparation of wafers not covered by a single main group of this
Official title: {by concurrent transfer of multiple parts}
H10P90/24 (Preparation of wafers not covered by a single main group of this) appears on 36 US grants and 44 published applications in this corpus.
Search patents in H10P- Granted patents
- 36
- Published applications
- 44
- Assignees
- 20
- Inventors
- 56
- Latest grant
- 23 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 1 | 1 |
| 2004 | 0 | 1 |
| 2005 | 0 | 2 |
| 2006 | 2 | 0 |
| 2007 | 3 | 2 |
| 2008 | 0 | 1 |
| 2009 | 1 | 3 |
| 2010 | 2 | 2 |
| 2011 | 3 | 2 |
| 2012 | 0 | 2 |
| 2013 | 0 | 1 |
| 2014 | 4 | 3 |
| 2015 | 1 | 0 |
| 2016 | 2 | 1 |
| 2017 | 0 | 0 |
| 2018 | 1 | 2 |
| 2019 | 1 | 2 |
| 2020 | 0 | 4 |
| 2021 | 3 | 2 |
| 2022 | 2 | 3 |
| 2023 | 3 | 4 |
| 2024 | 6 | 2 |
| 2025 | 1 | 3 |
| 2026 | 0 | 1 |
By publication year. 2026 runs to 8 Oct.
Recent patents
- Method for producing a crystalline layer of PZT material by transferring a seed layer of SRTIO3 to a silicon carrier substrate and epitaxially growing the crystalline layer of PZT, and substrate for epitaxial growth of a crystalline layer of PZT23 Sep 2025US 12,426,507 B2Soitec
- Method for transferring blocks from a donor substrate onto a receiver substrate by implanting ions in the donor substrate through a mask, bonding the donor substrate to the receiver substrate, and detaching the donor substrate along an embrittlement plane17 Sep 2024US 12,094,759 B2Soitec
- Method for manufacturing a film on a support having a non-flat surface10 Sep 2024US 12,087,615 B2Soitec
- Method for manufacturing a film on a flexible sheet30 Jul 2024US 12,052,921 B2Soitec
- Method for manufacturable large area gallium and nitrogen containing substrate2 Apr 2024US 11,949,212 B2KYOCERA SLD Laser, Inc.
- Method for manufacturing two substrates called donor pseudo-substrates each comprising at least two tiles on a carrier substrate6 Aug 2026US 2026/0231741 A1
- Method for producing a structure comprising at least two chips on a substrate10 Jul 2025US 2025/0226225 A1
- Method for producing a structure comprising at least two tiles on a substrate20 Mar 2025US 2025/0096003 A1
- Method for transferring blocks from a donor substrate onto a receiver substrate by implanting ions in the donor substrate through a mask, bonding the donor substrate to the receiver substrate, and detaching the donor16 Jan 2025US 2025/0022748 A1Soitec
- Structure comprising a support and having a non-flat surface28 Nov 2024US 2024/0395601 A1Soltec B.V.
Most cited
By later US patents
- Method of making mosaic array of thin semiconductor material of large substrates171US 6,562,127 B1The United States of America as represented by the Secretary of the Navy · 2003
- Methods to make piezoelectric ceramic thick film array and single elements with a reusable single layer substrate structure37US 7,574,787 B2Palo Alto Research Center Incorporated · 2009
- Methods for making thick film elements17US 7,234,214 B2Palo Alto Research Center Incorporated · 2007
- SOI active layer with different surface orientation13US 7,288,458 B2Freescale Semiconductor, Inc. · 2007
- Multilevel template assisted wafer bonding12US 9,922,967 B2Skorpios Technologies, Inc. · 2018