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US 12,426,507 B2Granted
Method for producing a crystalline layer of PZT material by transferring a seed layer of SRTIO3 to a silicon carrier substrate and epitaxially growing the crystalline layer of PZT, and substrate for epitaxial growth of a crystalline layer of PZT
AssigneeSoitec
InventorBruno Ghyselen
Life of this patent
Estimating the term…
Abstract
A process for producing a crystalline layer of PZT material, comprising the transfer of a monocrystalline seed layer of SrTiO3 material to a carrier substrate of silicon material, followed by epitaxial growth of the crystalline layer of PZT material.
Claims19
A process for producing a plurality of crystalline layers of PZT material, comprising:
- transferring a plurality of tiles to a carrier substrate comprising a substantially planar main surface, each tile of the plurality of tiles comprising a monocrystalline seed layer of SrTiO3;
- and
- epitaxially growing the plurality of crystalline layers of PZT material on the plurality of tiles,
- wherein each crystalline layer of PZT material of the plurality of crystalline layers of PZT material is disposed on a respective tile of the plurality of tiles,
- wherein the carrier substrate further comprises a detachable interface buried within the carrier substrate, the detachable interface configured to be detached by a laser debonding technique, chemical attack, and/or by means of mechanical stress.
2 more elements
A substrate, comprising:
- a carrier substrate comprising a substantially planar main surface;
- a plurality of tiles on the substantially planar main surface of the carrier substrate, each tile of the plurality of tiles comprising a monocrystalline seed layer of SrTiO3;
- and
- a plurality of crystalline layers of PZT material, wherein each crystalline layer of PZT material of the plurality of crystalline layers of PZT material is disposed on a respective tile of the plurality of tiles,
- wherein the carrier substrate further comprises a detachable interface buried within the carrier substrate, the detachable interface configured to be detached by a laser debonding technique, chemical attack, and/or by means of mechanical stress.
2 more elements
A substrate, comprising:
- a carrier substrate comprising a substantially planar main surface;
- a plurality of tiles on the substantially planar main surface of the carrier substrate, each tile of the plurality of tiles comprising a monocrystalline seed layer of SrTiO3;
- and
- a plurality of crystalline layers of PZT material, wherein each crystalline layer of PZT material of the plurality of crystalline layers of PZT material is disposed on a respective tile of the plurality of tiles,
- wherein at least one tile of the plurality of tiles exhibits a different size than at least one other tile of the plurality of tiles.
2 more elements
Dependencies are inferred from the claim text.