A method for transferring blocks from a donor substrate to a receiver substrate, comprising:
- forming, by ion implantation, a discontinuous embrittlement plane having localized implanted regions in the donor substrate, the discontinuous embrittlement plane delimiting, in a thickness of the donor substrate, a surface region of the donor substrate;
- forming blocks raised relative to a free surface of the donor substrate, each of the blocks located vertically in line with a respective one of the localized implanted regions of the discontinuous embrittlement plane, each block comprising a portion of the respective surface region of the donor substrate;
- bonding the donor substrate to the receiver substrate via each block at a bonding interface;
- and
- detaching the donor substrate at the localized implanted regions along the discontinuous embrittlement plane to transfer each respective block to the receiver substrate.