H10P 90/1924
With separation/delamination along a porous layer
Official title: {with separation/delamination along a porous layer}
H10P90/1924 (With separation/delamination along a porous layer) appears on 267 US grants and 286 published applications in this corpus.
Search patents in H10P- Granted patents
- 267
- Published applications
- 286
- Assignees
- 80
- Inventors
- 323
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 4 | 0 |
| 2000 | 7 | 0 |
| 2001 | 15 | 12 |
| 2002 | 18 | 21 |
| 2003 | 26 | 18 |
| 2004 | 13 | 49 |
| 2005 | 17 | 31 |
| 2006 | 21 | 32 |
| 2007 | 23 | 15 |
| 2008 | 17 | 22 |
| 2009 | 10 | 4 |
| 2010 | 22 | 6 |
| 2011 | 9 | 9 |
| 2012 | 7 | 6 |
| 2013 | 5 | 6 |
| 2014 | 4 | 7 |
| 2015 | 5 | 10 |
| 2016 | 10 | 4 |
| 2017 | 6 | 4 |
| 2018 | 4 | 5 |
| 2019 | 3 | 2 |
| 2020 | 3 | 2 |
| 2021 | 3 | 5 |
| 2022 | 1 | 1 |
| 2023 | 3 | 4 |
| 2024 | 2 | 5 |
| 2025 | 2 | 4 |
| 2026 | 4 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for producing a layer of solid material21 Jul 2026US 12,690,429 B2Siltectra GmbH
- Method for manufacturing semiconductor device9 Jun 2026US 12,652,802 B2Kioxia Corporation
- Manufacturing method of semiconductor structure31 Mar 2026US 12,593,636 B2United Microelectronics Corp.
- Method for forming semiconductor-on-insulator (SOI) substrate and recycle substrate17 Feb 2026US 12,557,391 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method for preparing the remainder of a donor substrate, substrate produced by said method, and use of such a substrate18 Nov 2025US 12,473,198 B2Soitec
- Method for Separating a Layer of Solid Material from a Workpiece8 Oct 2026US 2026/0314345 A1Siltectra GmbH
- Methods of processing semiconductor-on-insulator structures using clean-and-etch operation15 Jan 2026US 2026/0018457 A1GlobalWafers Co., Ltd.
- Substrate processing system and substrate processing method12 Jun 2025US 2025/0191905 A1Tokyo Electron Limited
- Transfer of a 2d material to a target substrate3 Apr 2025US 2025/0113520 A1Intel Corporation
- Direct transfer of transition metal dichalcogenide monolayers using diffusion bonding layers3 Apr 2025US 2025/0113521 A1Intel Corporation
Most cited
By later US patents
- Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method924US 6,372,608 B1Seiko Epson Corporation · 2002
- Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same714US 6,645,830 B2Seiko Epson Corporation · 2003
- Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same674US 6,818,530 B2Seiko Epson Corporation · 2004
- Method for producing semiconductor substrate513US 5,854,123 ACanon Kabushiki Kaisha · 1998
- Method of manufacturing a semiconductor device467US 6,380,046 B1Semiconductor Energy Laboratory Co.Ltd. · 2002