Manufacturing method of semiconductor structure

A manufacturing method of a semiconductor structure, comprising:

• providing a first wafer, wherein the first wafer comprises a first substrate and a first device layer, and the first device layer is located on the first substrate;
• providing a second wafer, wherein the second wafer comprises a second substrate and a second device layer, and the second device layer is located on the second substrate;
• bonding the second device layer to the first device layer;
• performing an edge trimming process on the first wafer and the second wafer to expose a first upper surface of the first substrate and a second upper surface of the first substrate and to form a damaged region in the first substrate below the first upper surface and the second upper surface, wherein the second upper surface is higher than the first upper surface;
• forming a first photoresist layer, wherein the first photoresist layer is located on the second wafer and the second upper surface and exposes the first upper surface and the damaged region;
• removing the damaged region by using the first photoresist layer as a mask;
• and
• removing the first photoresist layer.