Method for preparing the remainder of a donor substrate, substrate produced by said method, and use of such a substrate
AssigneeSoitec
InventorsCharlotte Drazek, Djamel Belhachemi
Life of this patent
Estimating the term…
Abstract
A method is used to prepare the remainder of a donor substrate, from which a layer has been removed by delamination in a plane weakened by ion implantation. The remainder comprises, on a main face, an annular step corresponding to a non-removed part of the donor substrate. The method comprises the deposition of a smoothing oxide on the main face of the remainder in order to fill the inner space defined by the annular step and to cover at least part of the annular step, as well as heat treatment for densification of the smoothing oxide. A substrate is produced by the method, and the substrate may be used in subsequent processes.
Claims20
A method for preparing a remainder of a donor substrate for reuse, a layer having been removed from the donor substrate by delamination in a plane weakened by ion implantation, the remainder having an annular step corresponding to a non-removed part of the donor substrate on a main face of the remainder of the donor substrate, the method comprising:
- depositing a smoothing oxide on the main face of the remainder of the donor substrate and completely filling an inner space defined by the annular step with the smoothing oxide, and covering an entirety of the annular step with the smoothing oxide;
- and
- densifying the smoothing oxide by applying a heat treatment to the smoothing oxide.
A substrate, comprising:
- a remainder of a donor substrate, the remainder comprising an annular step on a main face of the remainder of the donor substrate, the remainder having ion implantation damage at the main face thereof;
- and
- an oxide layer on the main face of the remainder, the oxide layer completely filling the inner space defined by the annular step and covering an entirety of the annular step of the remainder.
A method of using a substrate, comprising:
- providing a substrate including:
- a remainder of a donor substrate having ion implantation damage in a main face of the remainder of the donor substrate, the remainder comprising an annular step corresponding to a non-removed part of the donor substrate on the main face;
- and
- an oxide layer on the main face of the remainder, the oxide layer completely filling an inner space defined by the annular step and covering an entirety of the annular step of the remainder;
- assembling the substrate with a donor substrate;
- and
- thinning the donor substrate.
Dependencies are inferred from the claim text.