Method of manufacturing a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
Estimating the term…
Abstract
There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained.
Claims18
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a porous silicon layer by anodic oxidation of a first single crystal silicon substrate;
- proceeding an epitaxial growth of a single crystal silicon film on the porous silicon layer;
- forming a silicon oxide film on the single crystal silicon film;
- bonding the first single crystal silicon substrate to a second substrate through the silicon oxide film, said second substrate being as a support;
- carrying out a first heat treatment to the first single crystal silicon substrate and the second substrate;
- polishing the first single crystal silicon substrate until the porous silicon layer is exposed;
- exposing the single crystal silicon film by removing the porous silicon layer;
- forming a silicon island by patterning the single crystal silicon film;
- and
- thermally oxidizing the silicon island at a temperature in a range of from 1050 to 1150° C.
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a porous silicon layer by anodic oxidation of a first single crystal silicon substrate;
- proceeding an epitaxial growth of a single crystal silicon film on the porous silicon layer;
- forming a silicon oxide film on the single crystal silicon film;
- bonding the first single crystal silicon substrate to a second substrate through the silicon oxide film, said second substrate being as a support;
- polishing the first single crystal silicon substrate until the porous silicon layer is exposed;
- exposing the single crystal silicon film by removing the porous silicon layer;
- forming a silicon island by patterning the single crystal silicon film;
- and
- thermally oxidizing the silicon island at a temperature in a range of from 1050 to 1150° C.
Dependencies are inferred from the claim text.