H10P 90/1912
Using selective deposition
Official title: {using selective deposition, e.g. epitaxial lateral overgrowth [ELO] or selective deposition of single crystal silicon}
H10P90/1912 (Using selective deposition) appears on 248 US grants and 159 published applications in this corpus.
Search patents in H10P- Granted patents
- 248
- Published applications
- 159
- Assignees
- 110
- Inventors
- 487
- Latest grant
- 28 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 2 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 2 | 0 |
| 1985 | 5 | 0 |
| 1986 | 2 | 0 |
| 1987 | 4 | 0 |
| 1988 | 4 | 0 |
| 1989 | 6 | 0 |
| 1990 | 8 | 0 |
| 1991 | 7 | 0 |
| 1992 | 7 | 0 |
| 1993 | 3 | 0 |
| 1994 | 7 | 0 |
| 1995 | 8 | 0 |
| 1996 | 3 | 0 |
| 1997 | 3 | 0 |
| 1998 | 0 | 0 |
| 1999 | 3 | 0 |
| 2000 | 5 | 0 |
| 2001 | 11 | 4 |
| 2002 | 12 | 10 |
| 2003 | 18 | 9 |
| 2004 | 6 | 6 |
| 2005 | 5 | 9 |
| 2006 | 10 | 7 |
| 2007 | 2 | 1 |
| 2008 | 6 | 3 |
| 2009 | 3 | 3 |
| 2010 | 3 | 2 |
| 2011 | 1 | 2 |
| 2012 | 1 | 7 |
| 2013 | 2 | 4 |
| 2014 | 8 | 9 |
| 2015 | 8 | 7 |
| 2016 | 7 | 11 |
| 2017 | 7 | 13 |
| 2018 | 13 | 11 |
| 2019 | 11 | 5 |
| 2020 | 9 | 10 |
| 2021 | 9 | 4 |
| 2022 | 4 | 5 |
| 2023 | 3 | 4 |
| 2024 | 4 | 5 |
| 2025 | 3 | 1 |
| 2026 | 1 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Inertial sensor, method of manufacturing inertial sensor, and inertial measurement unit28 Jul 2026US 12,693,307 B2Seiko Epson Corporation
- Systems and techniques for forming silicon-on-oxide-on-silicon structures11 Nov 2025US 12,471,367 B2Board of Regents, The University of Texas System
- Composite substrate and production method therefor23 Sep 2025US 12,424,434 B2Shin-Etsu Chemical Co., Ltd.
- Method for fabricating germanium/silicon on insulator in radio frequency sputter system15 Jul 2025US 12,362,225 B2Indian Institute of Technology Bombay
- Semiconductor structure and forming method thereof25 Jun 2024US 12,020,980 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Systems and methods for controlling porous resistivities10 Sep 2026US 2026/0271688 A1IQE plc
- Systems and methods for porous wall coatings12 Mar 2026US 2026/0075939 A1IQE plc
- Seed structures in semiconductor devices and fabrication thereof26 Feb 2026US 2026/0059858 A1International Business Machines Corporation
- Method for preparing a carrier substrate provided with a charge-trapping layer26 Feb 2026US 2026/0060047 A1
- Method for manufacturing silicon substrate for quantum computer, silicon substrate for quantum computer, and semiconductor apparatus12 Feb 2026US 2026/0047406 A1Shin-Etsu Handotai Co., Ltd.
Most cited
By later US patents
- Epitaxial SiOx barrier/insulation layer457US 6,376,337 B1Nanodynamics, Inc. · 2002
- SOI methods and apparatus277US 5,514,885 A1996
- Method of manufacturing a semiconductor device having buried elements with electrical characteristic276US 5,286,670 AKorea Electronics and Telecommunications Research Institute · 1994
- Method for fabricating an SOI device in alignment with a device region formed in a semiconductor substrate268US 5,294,556 AFujitsu Limited · 1994
- Stacked semiconductor device with sloping sides227US 4,500,905 ATokyo Shibaura Denki Kabushiki Kaisha · 1985