Systems and techniques for forming silicon-on-oxide-on-silicon structures
AssigneeBoard of Regents, The University of Texas System
InventorsAlexander A. Demkov, John Elliott Ortmann, Jr., Agham Posadas
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Abstract
Some embodiments of the present technology simplify the process of producing SOI wafers significantly compared to traditional methods. Furthermore, various embodiments provide a route for the integration of perovskite transition metal oxide thin films with different properties into SOI wafers. As such films display a wide array of novel electronic, magnetic, and optical phenomena, their integration into technologically-relevant SOI wafers will likely allow for the construction of a wide array of novel devices.
Claims30
A silicon-on-insulator-on-silicon platform comprising:
- a silicon substrate;
- a buffer layer of strontium titanate (SrTiO3) or calcium titanate (CaTiO3) epitaxially grown on the silicon substrate;
- a functional oxide layer formed directly on the buffer layer and underlying a scavenging barrier insulating (SBI) oxide layer;
- the SBIoxide layer formed on top of the functional oxide layer;
- and
- a device silicon layer grown via direct epitaxial deposition on the SBI oxide layer, wherein:
- the SBIoxide layer comprises:
- a formation energy that is greater than a formation energy of silicon dioxide (SiO2) per oxygen atom;
- and
- a phase that allows for lattice matching with the silicon present in the device silicon layer, wherein the lattice matching comprises less than 5% lattice mismatches between the SBI oxide layer and the silicon;
- and
- wherein the SBI oxide layer and the functional oxide layer do not react with either the buffer layer or the device silicon layer.
A method for producing silicon-on-insulator-on-silicon platforms via direct deposition techniques, the method comprising:
- creating a buffer layer by epitaxially growing a seed layer of strontium titanate (SrTiO3) or calcium titanate (CaTiO3) on a silicon substrate;
- creating a scavenging barrier insulating (SBI) oxide layer on top of the buffer layer;
- and
- applying, via direct epitaxial deposition, a top silicon layer on the SBI oxide layer, wherein the SBI oxide layer comprises:
- a formation energy that is greater than a formation energy of silicon dioxide (SiO2) per oxygen atom;
- and
- a phase that allows for lattice matching with the silicon present in the top silicon layer, wherein the lattice matching comprises less than 5% lattice mismatches between the SBI oxide layer and the silicon.
A method for integrating crystalline silicon atop functional oxides via an epitaxial, insulating scavenging barrier (SBI) oxide layer, the method comprising:
- creating a buffer layer by epitaxially growing a seed layer of strontium titanate (SrTiO3) or calcium titanate (CaTiO3) on a silicon substrate;
- creating a functional oxide layer directly on the buffer layer and underlying a scavenging barrier insulating (SBI) oxide layer;
- creating the SBI oxide layer on top of the functional oxide layer;
- and
- applying, via direct epitaxial deposition, a top silicon layer on the SBI oxide layer,
- wherein the SBI oxide layer comprises:
- a formation energy that is greater than a formation energy of silicon dioxide (SiO2) per oxygen atom;
- and
- a phase that allows for lattice matching with the silicon present in the top silicon layer, wherein the lattice matching comprises less than 5% lattice mismatches between the SBI oxide layer and the silicon layer.
A silicon-on-insulator-on-silicon platform comprising:
- a silicon substrate;
- a buffer layer comprising an epitaxial oxide buffer layer epitaxially grown on the silicon substrate;
- an insulating oxide layer formed on top of the buffer layer, wherein the insulating oxide layer is a scavenging barrier layer to prevent oxygen scavenging from the buffer layer;
- and
- a device silicon layer grown via direct epitaxial deposition on the insulating oxide layer, wherein the insulating oxide layer comprises:
- a formation energy that is greater than a formation energy of silicon dioxide (SiO2) per oxygen atom;
- and
- a phase that allows for lattice matching with the silicon present in the device silicon layer, wherein the lattice matching comprises less than 5% lattice mismatches between the insulating oxide layer and the silicon.
Dependencies are inferred from the claim text.