Semiconductor structure and forming method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSoon-Kang Huang, Hsing-Chi Chen
Life of this patent
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Abstract
A semiconductor structure and a method for forming a semiconductor structure are provided. The method includes receiving a semiconductor substrate having a first region and a second region; forming a dielectric layer over the semiconductor substrate; removing portions of the dielectric layer to form a dielectric structure in the first region, wherein the dielectric structure includes a base structure and a plurality of first isolation structures over the base structure; forming a semiconductor layer covering the first region and the second region; removing a portion of the semiconductor layer to expose a top surface of the plurality of first isolation structures; and forming a plurality of second isolation structures in the second region.
Claims20
A method for forming a semiconductor structure, comprising:
- receiving a semiconductor substrate having a first region and a second region;
- forming a dielectric layer over the semiconductor substrate;
- removing portions of the dielectric layer to form a dielectric structure in the first region, wherein the dielectric structure includes a base structure and a plurality of first isolation structures over the base structure;
- forming a semiconductor layer covering the first region and the second region;
- removing a portion of the semiconductor layer to expose a top surface of the plurality of first isolation structures;
- and
- forming a plurality of second isolation structures in the second region.
A method for forming a semiconductor structure, comprising:
- receiving a semiconductor substrate having a plurality of first regions and a plurality of second regions;
- forming a dielectric layer over the semiconductor substrate, wherein the dielectric layer has a first thickness;
- removing portions of the dielectric layer to form a dielectric structure in the first region, wherein the dielectric structure includes a base structure and a plurality of first isolation structures over the base structure, the base structure has a second thickness, the plurality of first isolation structures has a first height, and the first thickness is substantially equal to a sum of the second thickness and the first height;
- forming a semiconductor layer over the semiconductor substrate;
- removing a portion of the semiconductor layer to expose a top surface of the plurality of first isolation structures;
- and
- forming a first transistor in at least one of the plurality of first regions and forming a second transistor in at least one of the plurality of second regions, wherein the first transistor is separated from the second transistor by at least one of the plurality of first isolation structures.
A method, comprising:
- forming a dielectric layer having a first thickness over a semiconductor substrate;
- patterning the dielectric layer to form a plurality of areas of the patterned dielectric layer having a second thickness, the second thickness less than the first thickness;
- removing a portion of the patterned dielectric layer from above a region of the semiconductor substrate, wherein the patterned dielectric layer provides a first isolation structure, the region extending adjacent the first isolation structure;
- depositing a semiconductor layer over the first isolation structure and the region;
- and
- planarizing the semiconductor layer to expose a top surface of the first isolation structure.
Dependencies are inferred from the claim text.