H10P 90/1922
Using silicon etch back techniques
Official title: {using silicon etch back techniques, e.g. BESOI or ELTRAN}
H10P90/1922 (Using silicon etch back techniques) appears on 505 US grants and 558 published applications in this corpus.
Search patents in H10P- Granted patents
- 505
- Published applications
- 558
- Assignees
- 182
- Inventors
- 880
- Latest grant
- 28 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1991 | 2 | 0 |
| 1992 | 1 | 0 |
| 1993 | 3 | 0 |
| 1994 | 5 | 0 |
| 1995 | 7 | 0 |
| 1996 | 3 | 0 |
| 1997 | 5 | 0 |
| 1998 | 3 | 0 |
| 1999 | 5 | 0 |
| 2000 | 9 | 0 |
| 2001 | 10 | 5 |
| 2002 | 11 | 15 |
| 2003 | 13 | 15 |
| 2004 | 24 | 29 |
| 2005 | 13 | 22 |
| 2006 | 13 | 27 |
| 2007 | 16 | 24 |
| 2008 | 14 | 32 |
| 2009 | 18 | 26 |
| 2010 | 24 | 29 |
| 2011 | 27 | 34 |
| 2012 | 20 | 22 |
| 2013 | 23 | 19 |
| 2014 | 25 | 27 |
| 2015 | 19 | 27 |
| 2016 | 21 | 21 |
| 2017 | 24 | 27 |
| 2018 | 13 | 18 |
| 2019 | 22 | 25 |
| 2020 | 23 | 24 |
| 2021 | 20 | 24 |
| 2022 | 17 | 20 |
| 2023 | 20 | 18 |
| 2024 | 13 | 11 |
| 2025 | 17 | 7 |
| 2026 | 2 | 10 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Method for manufacturing composite substrate21 Oct 2025US 12,451,854 B2Shin-Etsu Chemical Co., Ltd.
- Apparatus with thickness control mechanism and methods for manufacturing the same24 Sep 2026US 2026/0293624 A1Micron Technology, Inc.
- Method of manufacturing silicon on insulator substrate20 Aug 2026US 2026/0247931 A1SK hynix Inc.
- Method of forming silicon on insulator substrate20 Aug 2026US 2026/0247933 A1SK hynix Inc.
- Method for forming a silicon on insulator substrate20 Aug 2026US 2026/0247935 A1Microchip Technology Incorporated
- A method for the manufacture of a graphene-containing laminate30 Jul 2026US 2026/0223425 A1Paragraf Limited
Most cited
By later US patents
- Method of transferring a thin film to an alternate substrate431US 5,391,257 ARockwell International Corporation · 1995
- Strained-semiconductor-on-insulator device structures396US 6,995,430 B2AmberWave Systems Corporation · 2006
- Method of producing a thin silicon-on-insulator layer381US 5,013,681 AThe United States of America as represented by the Secretary of the Navy · 1991
- Process of making semiconductor-on-insulator substrate331US 5,670,411 ACanon Kabushiki Kaisha · 1997
- Multi-layer type semiconductor device with semiconductor element layers stacked in opposite directions and manufacturing method thereof319US 5,189,500 AMitsubishi Denki Kabushiki Kaisha · 1993