Multi-layer type semiconductor device with semiconductor element layers stacked in opposite directions and manufacturing method thereof

A multi-layer type semiconductor device comprising;

• a transparent substrate,
• a display element layer including display elements and formed on said transparent substrate such that a display given by said display elements is visible through said transparent substrate,
• a circuit layer formed on and connected to said display element layer and including a processing circuit for processing a display to be given by said display elements,
• an insulating layer formed on said circuit layer and including through holes, and
• a sensor layer formed on said insulating layer and having a surface exposed outwardly, said sensor layer including sensing elements arranged in vertically back-to-back relations with said display elements of said display element layer and electrically connected to said circuit layer via said through holes for converting an amount of information received from outside into an electric signal for processing by said circuit layer.

A multi-layer type semiconductor device comprising;

• a substrate defining perforations and having conductors formed in said perforations,
• a first circuit layer formed on said substrate and including an electric circuit electrically connected to said conductors,
• an insulating layer formed on said first circuit layer and defining through holes,
• a second circuit layer formed on said insulating layer and including an electric circuit arranged in vertically back-to-back relations with said electric circuit of said first circuit layer and electrically connected to said electric circuit of said first circuit layer via said through holes, and
• pads formed on said insulating layer and electrically connected to said electric circuit of said second circuit layer.