Process of making semiconductor-on-insulator substrate
AssigneeCanon Kabushiki Kaisha
InventorsTakao Yonehara, Kenji Yamagata
Life of this patent
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Abstract
A process for forming a semiconductor substrate wherein an epitaxial layer is formed on a porous layer of a first substrate, an insulating layer is formed on the epitaxial layer, the insulating layer is bonded to a second substrate and the porous layer is selectively removed.
Claims37
A process for preparing a semiconductor substrate which comprises a step of making an entire silicon monocrystalline substrate as a first substrate porous by anodization, a step of making a silicon monocrystalline thin film to epitaxially grow on one of the porous surfaces of the first substrate, a step of oxidizing the surface of the silicon monocrystalline thin film, a step of forming an insulating layer capable of producing reflow by heat treatment over the oxidized surface, a step of bonding the insulating layer to a second substrate and heating the resulting bonded first and second substrates, and a step of selectively etching the porous region.
A process for preparing a semiconductor substrate which comprises a step of making the surface layer on one side of a silicon monocrystalline substrate as a first substrate porous, a step of making a silicon monocrystalline thin film to epitaxially grow on the porous surface of the first substrate, a step of oxidizing the surface of the silicon monocrystalline thin film, a step of forming an insulating layer capable of producing reflow by heat treatment over the oxidized surface, a step of bonding the insulating layer to a second substrate and heating the resulting bonded first and second substrates, a step of removing the non-porous monocrystalline substrate region of the first substrate, and a step of selectively etching the porous silicon region.
A process for preparing a semiconductor substrate, which comprises the steps of:
- providing a first substrate having a porous monocrystalline semiconductor layer and a non-porous monocrystalline semiconductor layer;
- forming a first insulating layer on the non-porous monocrystalline semiconductor layer of the first substrate;
- forming a second insulating layer which can be reflowed by heating on the first insulating layer;
- bonding the second insulating layer to a second substrate and heating the resulting bonded first and second substrates;
- and
- removing the porous monocrystalline semiconductor layer from the bonded first and second substrates to obtain the semiconductor substrate.
Dependencies are inferred from the claim text.