Method of manufacturing silicon on insulator substrate

A method of manufacturing a silicon on insulator (SOI) substrate, the method comprising:

• forming a first wafer structure by sequentially forming an etch stopper, a
• semiconductor layer, a buried insulation layer and a first bonding insulation layer on an upper surface of a first wafer, wherein the first wafer includes a notch and a wafer identification (ID) formed on an edge of the first wafer;
• removing an edge of the first wafer structure, such that the notch and the wafer ID are removed, to form a trimmed region;
• removing residual trimming products of the first bonding insulation layer from the first wafer structure;forming a second bonding insulation layer on a second wafer to form a second wafer structure;
• bonding the first wafer structure to the second wafer structure such that the first bonding insulation layer and the second bonding insulation layer face each other;
• and
• removing the first wafer of the first wafer structure and the etch stopper.