Method for forming a silicon on insulator substrate
AssigneeMicrochip Technology Incorporated
InventorsSteve Nagel, Bomy Chen
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Abstract
A system and method for an efficient method for creating a silicon on insulator (SOI) wafer are disclosed. The method may include coating an unpolished single-crystalline silicon wafer with a spin-on-glass to create a spin-on-glass layer. The method may also include growing an etch stop layer on a second single-crystalline silicon wafer. The method may additionally include growing a silicon layer on the etch stop layer. The method may include bonding the silicon layer to the spin-on-glass layer. The method may also include polishing back the second single-crystalline silicon wafer. The method may further include removing the etch stop layer to create a silicon on insulator (SOI) substrate.
Claims20
A method, comprising:
- coating an unpolished single-crystalline silicon wafer with a spin-on-glass to create a spin-on-glass layer;
- growing an etch stop layer on a second single-crystalline silicon wafer;
- growing a silicon layer on the etch stop layer;
- bonding the silicon layer to the spin-on-glass layer;
- polishing back the second single-crystalline silicon wafer;
- and
- removing the etch stop layer to create a silicon on insulator (SOI) substrate.
A silicon on insulator (SOI) substrate, created by a process comprising:
- coating an unpolished single-crystalline silicon wafer with a spin-on-glass to create a spin-on-glass layer;
- growing an etch stop layer on a second single-crystalline silicon wafer;
- growing a silicon layer on the etch stop layer;
- bonding the silicon layer to the spin-on-glass layer;
- polishing back the second single-crystalline silicon wafer;
- and
- removing the etch stop layer to create a silicon on insulator (SOI) substrate.
A silicon on insulator (SOI) substrate, comprising:
- a first portion including:
- an unpolished single-crystalline silicon wafer;
- a spin-on-glass layer coating the unpolished single-crystalline silicon wafer;
- and
- a silicon layer bonded to the spin-on-glass layer;
- and
- a second portion including a polished single-crystalline silicon wafer.
Dependencies are inferred from the claim text.