H10P 50/287
By chemical means
Official title: {by chemical means}
H10P50/287 (By chemical means) appears on 3,137 US grants and 3,335 published applications in this corpus.
Search patents in H10P- Granted patents
- 3,137
- Published applications
- 3,335
- Assignees
- 627
- Inventors
- 6,274
- Latest grant
- 22 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 4 | 0 |
| 1977 | 4 | 0 |
| 1978 | 2 | 0 |
| 1979 | 1 | 0 |
| 1980 | 6 | 0 |
| 1981 | 4 | 0 |
| 1982 | 11 | 0 |
| 1983 | 7 | 0 |
| 1984 | 11 | 0 |
| 1985 | 11 | 0 |
| 1986 | 6 | 0 |
| 1987 | 8 | 0 |
| 1988 | 5 | 0 |
| 1989 | 18 | 0 |
| 1990 | 12 | 0 |
| 1991 | 12 | 0 |
| 1992 | 7 | 0 |
| 1993 | 14 | 0 |
| 1994 | 17 | 0 |
| 1995 | 18 | 0 |
| 1996 | 13 | 0 |
| 1997 | 17 | 0 |
| 1998 | 26 | 0 |
| 1999 | 38 | 0 |
| 2000 | 61 | 0 |
| 2001 | 85 | 42 |
| 2002 | 115 | 130 |
| 2003 | 123 | 134 |
| 2004 | 112 | 180 |
| 2005 | 93 | 173 |
| 2006 | 96 | 160 |
| 2007 | 112 | 145 |
| 2008 | 80 | 126 |
| 2009 | 82 | 101 |
| 2010 | 85 | 108 |
| 2011 | 61 | 83 |
| 2012 | 96 | 87 |
| 2013 | 88 | 87 |
| 2014 | 72 | 133 |
| 2015 | 116 | 202 |
| 2016 | 178 | 181 |
| 2017 | 171 | 158 |
| 2018 | 131 | 162 |
| 2019 | 160 | 192 |
| 2020 | 174 | 156 |
| 2021 | 123 | 120 |
| 2022 | 124 | 124 |
| 2023 | 73 | 123 |
| 2024 | 87 | 99 |
| 2025 | 103 | 85 |
| 2026 | 64 | 44 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Substrate processing method and apparatus22 Sep 2026US 12,745,611 B2ASM IP Holding B. V.
- Film formation method15 Sep 2026US 12,740,353 B2Tokyo Electron Limited
- Methods for semiconductor process chamber25 Aug 2026US 12,719,025 B2Tokyo Electron Limited
- Method of manufacturing semiconductor device and semiconductor device having trench contact25 Aug 2026US 12,721,073 B2Fuji Electric Co., Ltd.
- Substrate treatment device and substrate treatment method25 Aug 2026US 12,721,085 B2SCREEN Holdings Co., Ltd.
- Method for forming source/drain contacts8 Oct 2026US 2026/0314054 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor packages and methods of manufacturing thereof8 Oct 2026US 2026/0314284 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Apparatus and method for removal of oxide and carbon from semiconductor films in a single processing chamber8 Oct 2026US 2026/0314290 A1ASM IP Holding B. V.
- Methods for reducing critical dimension variation1 Oct 2026US 2026/0305208 A1Tokyo Electron Limited
- Selective tantalum nitride deposition for barrier applications10 Sep 2026US 2026/0271641 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Method for depositing an amorphous carbon layer1,124US 6,573,030 B1APPLIED Materials.Inc. · 2003
- Methods and apparatus for passivating a substrate in a plasma reactor567US 5,968,275 ALam Research Corporation · 1999
- Apparatus and method for photoetching of polyimides, polycarbonates and polyetherimides552US 4,857,382 AGeneral Electric Company · 1989
- Method for removing photoresist layer from substrate by ozone treatment543US 4,341,592 ATexas Instruments Incorporated · 1982
- Method of repairing a low dielectric constant material layer538US 6,521,547 B1United Microelectronics Corp. · 2003