Method of repairing a low dielectric constant material layer

A method of repairing a low dielectric constant (low k) material layer, the method comprising:

• providing a semiconductor wafer with a low k material layer;
• coating a photoresist layer on the low k material layer;
• forming an opening to expose a portion of the low k material layer;
• dry etching the low k material layer through the opening to transfer a pattern in the photoresist layer to the low k material layer;
• performing an oxygen plasma ashing process to remove the photoresist layer;
• and
• contacting the low k material layer with a hexane solution of alkyl silane comprising an alkyl group and halo substituent;
• wherein the hexane solution of alkyl silane comprising the alkyl group and halo substituent is employed to remove Si—OH bonds formed in the low k layer during the oxygen plasma ashing process to repair damage to the low k material layer caused by the oxygen plasma ashing process, and to enhance a surface of the low k material layer to a hydrophobic surface to prevent moisture adhering to the surface of the low k material layer.