Semiconductor packages and methods of manufacturing thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLung-Kai Mao, Wen-Hsiung Lu, Chieh-Ning Feng, Pei-Wei Lee, Szu-Hsien Lee
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Abstract
A semiconductor package includes a die having a plurality of devices over a first substrate, where the first substrate includes a dopant at a first concentration and the first substrate has a first width along a horizontal direction. The semiconductor package further includes a second substrate fused with the first substrate, where the second substrate includes the dopant at a second concentration greater than the first concentration. The second substrate has a second width along the horizontal direction, where the second width is greater than the first width.
Claims20
A method, comprising:
- forming a semiconductor die including a plurality of devices over a first substrate;
- bonding a backside of the first substrate to a second substrate;
- singulating the semiconductor die to form a semiconductor package;
- and
- trimming the semiconductor package such that the first substrate has a first width and the second substrate has a second width that is greater than the first width;
- wherein the first substrate includes a first semiconductor material and the second substrate includes a second semiconductor material having a different crystal structure than the first semiconductor material.
A method, comprising:
- forming a semiconductor die including device features over a first substrate;
- fusing a backside of the first substrate with a second substrate;
- cutting the semiconductor die to form a semiconductor package;
- and
- etching sidewalls of the semiconductor package, wherein the step of etching the sidewalls includes selectively etching the first substrate with respect to the second substrate;
- wherein the first substrate includes a first semiconductor material and the second substrate includes a second semiconductor material having a different crystal structure than the first semiconductor material.
A method, comprising:
- forming a semiconductor die including device features over a first substrate;
- fusing a backside of the first substrate with a second substrate;
- cutting the semiconductor die to form a semiconductor package;
- performing an isotropic etching process using a first gaseous species to form a first recess in the first substrate and a second recess in the second substrate;
- performing a deposition process to form a polymer layer in the first recess and the second recess using a second gaseous species;
- and
- performing an anisotropic etching process using the first gaseous species to remove portions of the polymer layer not deposited in the first recess and the second recess;
- wherein the first substrate includes a first semiconductor material and the second substrate includes a second semiconductor material having a different crystal structure than the first semiconductor material.
Dependencies are inferred from the claim text.