H10P 14/3458
Monocrystalline
Official title: {Monocrystalline}
H10P14/3458 (Monocrystalline) appears on 469 US grants and 445 published applications in this corpus.
Search patents in H10P- Granted patents
- 469
- Published applications
- 445
- Assignees
- 208
- Inventors
- 876
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 1 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 6 | 0 |
| 1986 | 4 | 0 |
| 1987 | 8 | 0 |
| 1988 | 4 | 0 |
| 1989 | 4 | 0 |
| 1990 | 2 | 0 |
| 1991 | 10 | 0 |
| 1992 | 7 | 0 |
| 1993 | 5 | 0 |
| 1994 | 6 | 0 |
| 1995 | 6 | 0 |
| 1996 | 10 | 0 |
| 1997 | 3 | 0 |
| 1998 | 4 | 0 |
| 1999 | 7 | 0 |
| 2000 | 4 | 0 |
| 2001 | 5 | 4 |
| 2002 | 8 | 15 |
| 2003 | 7 | 14 |
| 2004 | 11 | 9 |
| 2005 | 9 | 11 |
| 2006 | 8 | 11 |
| 2007 | 13 | 15 |
| 2008 | 9 | 6 |
| 2009 | 9 | 3 |
| 2010 | 7 | 5 |
| 2011 | 8 | 4 |
| 2012 | 7 | 20 |
| 2013 | 7 | 8 |
| 2014 | 9 | 20 |
| 2015 | 17 | 29 |
| 2016 | 25 | 37 |
| 2017 | 34 | 37 |
| 2018 | 33 | 22 |
| 2019 | 24 | 21 |
| 2020 | 22 | 32 |
| 2021 | 23 | 39 |
| 2022 | 19 | 25 |
| 2023 | 20 | 15 |
| 2024 | 22 | 24 |
| 2025 | 14 | 14 |
| 2026 | 5 | 5 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Crystalline oxide film and semiconductor device29 Sep 2026US 12,751,220 B2Flosfia Inc.
- Methods of forming superlattice structures using nanoparticles14 Jul 2026US 12,685,041 B2ASM IP Holding B. V.
- Vacancy-rich silicon for use with a gallium nitride epitaxial layer23 Jun 2026US 12,662,752 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Method to produce a 3D multilayer semiconductor device and structure19 May 2026US 12,635,163 B2Monolithic 3D Inc.
- Uniform epitaxial growth over crystalline template19 May 2026US 12,635,197 B2APPLIED Materials.Inc.
- Vacancy-rich silicon for use with a gallium nitride epitaxial layer17 Sep 2026US 2026/0275570 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Production method of monocrystalline silicon for epitaxial silicon wafer and production method of epitaxial silicon wafer18 Jun 2026US 2026/0168131 A1Sumco Corporation
- Method for thinning a composite structure carried by a polycrystalline sic carrier substrate, with reduced warpage26 Mar 2026US 2026/0090307 A1
- Semiconductor structure26 Feb 2026US 2026/0059804 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Method to produce a 3d multilayer semiconductor device and structure1 Jan 2026US 2026/0006819 A1Monolithic 3D Inc.
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Plasma pre-clean module and process477US 9,299,557 B2ASM IP Holding B. V. · 2016
- Plasma pre-clean module and process474US 9,514,927 B2ASM IP Holding B. V. · 2016
- Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations469US 9,929,011 B2Ultratech, Inc. · 2018
- Semiconductor thin film forming method, production methods for semiconductor device and electrooptical device, devices used for these methods, and semiconductor device and electrooptical device465US 7,183,229 B2Sony Corporation · 2007