Method for thinning a composite structure carried by a polycrystalline sic carrier substrate, with reduced warpage
OwnerWalter Schwarzenbach, Séverin Rouchier +1inventors
InventorsWalter Schwarzenbach, Séverin Rouchier, Sylvain Monnoye
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Abstract
A method of processing a composite structure including a thin layer of single-crystal silicon carbide disposed on a polycrystalline silicon carbide carrier substrate, includes, after formation of electronic component elements on a front face of the composite structure, grinding a rear face of the composite structure and removing a work-hardened layer present on the surface of the rear face as a result of the grinding process.
Claims20
A method of processing a composite structure including a thin layer of single-crystal silicon carbide disposed on a polycrystalline silicon carbide carrier substrate, the composite structure having a front side on a side of the thin layer of single-crystal silicon carbide and a back side opposite the front side, the method comprising, after forming elements of electronic components on the front side of the composite structure, thinning the composite structure from the back side by grinding the polycrystalline silicon carbide carrier substrate and removing a work-hardened layer present on the surface of the back side after grinding.
Dependencies are inferred from the claim text.