Production method of monocrystalline silicon for epitaxial silicon wafer and production method of epitaxial silicon wafer

A production method of a monocrystalline silicon, the method comprising:

• forming the monocrystalline silicon weighing 60 kg or more and 180 kg or less by contacting a seed crystal with a dopant-added melt contained within a crucible disposed inside a chamber of a monocrystal pull-up apparatus, the dopant-added melt comprising a silicon melt and red phosphorus added to the silicon melt;
• after bringing the seed crystal into contact with the dopant-added melt, pulling up the seed crystal with a pull-up unit contained in the monocrystal pull-up apparatus to pull up the monocrystalline silicon;
• and
• cooling the monocrystalline silicon;
• the method further comprising:
• adding the red phosphorus into the silicon melt so that an electrical resistivity of the monocrystalline silicon falls in a range of 0.5 mΩ·cm or more and less than 0.7 mΩ·cm,
• wherein:
• during the cooling, the monocrystalline silicon is pulled up a distance of 400 mm or more within 180 minutes after separating a tail of the monocrystalline silicon from the dopant-added melt,
• a time for a temperature of a part of a straight body of the monocrystalline silicon to be 570° C.±70° C. is in a range from 10 minutes to 50 minutes, and
• the part of the straight body of the monocrystalline silicon is included in a region of the straight body having a solidification percentage in a range from 52% to 87%.