H10P 10/128
By direct semiconductor to semiconductor bonding
Official title: {by direct semiconductor to semiconductor bonding}
H10P10/128 (By direct semiconductor to semiconductor bonding) appears on 770 US grants and 842 published applications in this corpus.
Search patents in H10P- Granted patents
- 770
- Published applications
- 842
- Assignees
- 278
- Inventors
- 1,496
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 6 | 0 |
| 1988 | 3 | 0 |
| 1989 | 5 | 0 |
| 1990 | 5 | 0 |
| 1991 | 7 | 0 |
| 1992 | 9 | 0 |
| 1993 | 5 | 0 |
| 1994 | 5 | 0 |
| 1995 | 7 | 0 |
| 1996 | 2 | 0 |
| 1997 | 6 | 0 |
| 1998 | 4 | 0 |
| 1999 | 10 | 0 |
| 2000 | 18 | 0 |
| 2001 | 15 | 2 |
| 2002 | 12 | 15 |
| 2003 | 13 | 11 |
| 2004 | 7 | 13 |
| 2005 | 10 | 26 |
| 2006 | 13 | 28 |
| 2007 | 17 | 21 |
| 2008 | 21 | 37 |
| 2009 | 14 | 22 |
| 2010 | 19 | 40 |
| 2011 | 28 | 43 |
| 2012 | 28 | 50 |
| 2013 | 23 | 40 |
| 2014 | 49 | 31 |
| 2015 | 41 | 49 |
| 2016 | 39 | 33 |
| 2017 | 43 | 47 |
| 2018 | 36 | 40 |
| 2019 | 41 | 42 |
| 2020 | 41 | 46 |
| 2021 | 42 | 29 |
| 2022 | 26 | 29 |
| 2023 | 24 | 42 |
| 2024 | 20 | 47 |
| 2025 | 28 | 32 |
| 2026 | 20 | 27 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Multi-material chuck8 Sep 2026US 12,733,450 B2Tokyo Electron Limited
- Method for manufacturing deep-junction low-gain avalanche detectors and associated semiconductor substrates25 Aug 2026US 12,720,904 B2Cactus Materials, Inc.
- Strong base-assisted direct bonding method4 Aug 2026US 12,701,973 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Bonding apparatus and bonding method14 Jul 2026US 12,685,039 B2Tokyo Electron Limited
- Apparatus and methods for processing bonding semiconductor wafers16 Jun 2026US 12,660,525 B2Tokyo Electron Limited
- Apparatus and methods for processing bonding semiconductor wafers1 Oct 2026US 2026/0305197 A1Tokyo Electron Limited
- Adjustable chuck for wafer bonding1 Oct 2026US 2026/0305258 A1Tokyo Electron Limited
- Wafer processing method and device chip manufacturing method1 Oct 2026US 2026/0305271 A1Disco Corporation
- Bonded substrate, semiconductor device, and method of producing bonded substrate24 Sep 2026US 2026/0293255 A1NGK Insulators, Ltd.
- Bonding apparatus, bonding system, and bonding method17 Sep 2026US 2026/0282827 A1Tokyo Electron Limited
Most cited
By later US patents
- Process of fabricating three-dimensional semiconductor device576US 4,612,083 ANEC Corporation · 1986
- Advanced methods for making semiconductor devices by low temperature direct bonding449US 6,153,495 AIntersil Corporation · 2000
- Controlled cleavage process and device for patterned films426US 5,985,742 ASilicon Genesis Corporation · 1999
- Process for producing semiconductor article392US 6,534,382 B1Canon Kabushiki Kaisha · 2003
- Controlled cleavage process and device for patterned films344US 6,528,391 B1Silicon Genesis Corporation · 2003